EEWORLDEEWORLDEEWORLD

Part Number

Search

DN0150BDJ-7

Description
DUAL NPN SURFACE MOUNT TRANSISTOR
File Size79KB,4 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Compare View All

DN0150BDJ-7 Online Shopping

Suppliers Part Number Price MOQ In stock  
DN0150BDJ-7 - - View Buy Now

DN0150BDJ-7 Overview

DUAL NPN SURFACE MOUNT TRANSISTOR

DN0150ADJ / DN0150BDJ
DUAL NPN SURFACE MOUNT TRANSISTOR
Please click here to visit our online spice models database.
Features
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Ultra Small Package
Mechanical Data
SOT-963
NEW PRODUCT
Case: SOT-963
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish
Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.0027 grams (approximate)
6
5
4
Q1
Q2
1
Top View
2
3
Device Schematic
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous
Base Current
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
Value
60
50
5
100
30
Unit
V
V
V
mA
mA
Characteristic
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage Temperature Range
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
300
417
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capactiance
Notes:
1.
2.
3.
4.
@T
A
= 25°C unless otherwise specified
Symbol
V(
BR)CBO
V(
BR)CEO
V(
BR)EBO
I
CBO
I
EBO
V
CE(SAT)
DN0150ADJ
DN0150BDJ
h
FE
Min
60
50
5
120
200
60
Typ
0.10
1.3
Max
0.1
0.1
0.25
240
400
Unit
V
V
V
μA
μA
V
Test Condition
I
C
= 10μA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10μA, I
C
= 0
V
CB
= 60V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 100mA, I
B
= 10mA
V
CE
= 6V, I
C
= 2mA
V
CE
= 10V, I
E
= -1mA
f = 30MHz
V
CB
= 10V, I
E
= 0,
f = 1MHz
f
T
C
ob
MHz
pF
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB with minimum recommended pad layout.
Measured under pulsed conditions. Pulse width = 300µs. Duty cycle
≤2%
DN0150ADJ / DN0150BDJ
Document number: DS31484 Rev. 3 - 2
1 of 4
www.diodes.com
April 2009
© Diodes Incorporated

DN0150BDJ-7 Related Products

DN0150BDJ-7 DN0150ADJ
Description DUAL NPN SURFACE MOUNT TRANSISTOR DUAL NPN SURFACE MOUNT TRANSISTOR

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2712  2843  229  2572  2154  55  58  5  52  44 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号