2SB624
Elektronische Bauelemente
-0.7A , -30V
PNP Silicon Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
SOT-23
A
L
3
3
High DC Current Gain. h
FE
：200
(Typ.) (V
CE
= -1V, I
C
= -100mA)
Complimentary to 2SD596
MARKING
1
Top View
C B
1
2
2
Product-Rank
Range
Product-Rank
Range
2SB624-BV1
110~180
2SB624-BV4
200~320
2SB624-BV2
135~220
2SB624-BV5
250~400
2SB624-BV3
170~270
K
E
D
F
REF.
A
B
C
D
E
F
G
Millimeter
Min.
Max.
2.80
3.00
2.25
2.55
1.20
1.40
0.90
1.15
1.80
2.00
0.30
0.50
H
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.10 REF.
0.55 REF.
0.08
0.15
0.5 REF.
0.95 TYP.
PACKAGE INFORMATION
Package
SOT-23
MPQ
3K
LeaderSize
7’ inch
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction and Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
-30
-25
-5
-700
200
150, -55~150
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector to Emitter
Saturation Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
http://www.SeCoSGmbH.com/
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE (1)*
h
FE (2)*
V
CE(sat) *
V
BE *
f
T
C
ob
Min.
-30
-25
-5
-
-
110
50
-
-0.6
-
-
Typ.
-
-
-
-
-
-
-
-
-
160
17
Max.
-
-
-
-0.1
-0.1
400
-
-0.6
-0.7
-
-
Unit
V
V
V
A
A
Test Conditions
I
C
= -100A, I
E
=0
I
C
= -1mA, I
B
=0
I
E
= -100A, I
C
=0
V
CB
= -30V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
= -1V, I
C
= -100mA
V
CE
= -1V, I
C
= -700mA
V
V
MHz
pF
I
C
= -700mA, I
B
= -70mA
V
CE
= -6V, I
C
= -10mA
V
CE
= -6V, I
C
= -10mA
V
CB
= -6V, I
E
=0, f=1MHz
*Pulse test：Pulse width
≦
350
s, Duty Cycle
≦
2%.
Any changes of specification will not be informed individually.
15-Feb-2011 Rev. A
Page 1 of 2
2SB624
Elektronische Bauelemente
-0.7A , -30V
PNP Silicon Plastic Encapsulated Transistor
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
15-Feb-2011 Rev. A
Page 2 of 2
ARM Technology
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