DSS20201L
LOW V
CE(SAT)
NPN SURFACE MOUNT TRANSISTOR
Features
•
•
•
•
•
Ideal for Medium Power Amplification and Switching
Complementary PNP Type Available (DSS20200L)
Ultra Low Collector-Emitter Saturation Voltage
Lead Free By Design/RoHS Compliant (Note 1)
“Green” Device (Note 2)
Mechanical Data
•
•
•
•
•
•
•
Case: SOT-23
Case Material: Molded Plastic, "Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish — Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.008 grams (approximate)
C
NEW PRODUCT
B
Top View
E
Device Schematic
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
CM
I
C
Value
20
20
6
4
2
Unit
V
V
V
A
A
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ T
A
= 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ T
A
= 25°C
Power Dissipation (Note 4) @ T
A
= 25°C
Thermal Resistance, Junction to Ambient Air (Note 4) @ T
A
= 25°C
Operating and Storage Temperature Range
Notes:
1.
2.
3.
4.
Symbol
P
D
R
θ
JA
P
D
R
θ
JA
T
J
, T
STG
Value
600
209
1.2
104
-55 to +150
Unit
mW
°C/W
mW
°C/W
°C
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB with minimum recommended pad layout.
Device mounted on FR-4 PCB with 1 inch
2
copper pad layout.
DSS20201L
Document number: DS31605 Rev. 2 - 2
1 of 5
www.diodes.com
December 2008
© Diodes Incorporated
DSS20201L
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Min
20
20
6
⎯
⎯
200
200
200
200
⎯
⎯
⎯
⎯
⎯
⎯
⎯
150
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ
⎯
⎯
⎯
⎯
⎯
⎯
330
⎯
⎯
⎯
40
75
70
35
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Max
⎯
⎯
⎯
100
100
⎯
⎯
⎯
⎯
10
50
90
100
50
0.9
0.9
⎯
45
450
200
100
100
610
500
110
Unit
V
V
V
nA
nA
Test Conditions
I
C
= 100μA
I
C
= 10mA
I
E
= 100μA
V
CB
= 20V, I
E
= 0
V
EB
= 6V, I
C
= 0
V
CE
= 2V, I
C
= 10mA
V
CE
= 2V, I
C
= 500mA
V
CE
= 2V, I
C
= 1A
V
CE
= 2V, I
C
= 2A
I
C
= 0.1A, I
B
= 10mA
I
C
= 1.0A, I
B
= 100mA
I
C
= 1.0A, I
B
= 10mA
I
C
= 2.0A, I
B
= 200mA
I
E
= 2A, I
B
= 200mA
I
C
= 1A, I
B
= 10mA
V
CE
= 2V, I
C
= 1A
V
CE
= 5V, I
C
= 100mA,
f = 100MHz
V
CB
= 3V, f = 1MHz
V
EB
= 0.5V, f = 1MHz
V
CC
= 15V, I
C
= 750mA,
I
B1
= 15mA
V
CC
= 15V, I
C
= 750mA,
I
B1
= I
B2
= 15mA
NEW PRODUCT
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
h
FE
⎯
Collector-Emitter Saturation Voltage
V
CE(SAT)
R
CE(SAT)
V
BE(SAT)
V
BE(ON)
f
T
C
obo
C
ibo
t
on
t
d
t
r
t
off
t
s
t
f
mV
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Input Capacitance
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Notes:
mΩ
V
V
MHz
pF
pF
ns
ns
ns
ns
ns
ns
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle
≤2%.
1.6
1.4
10
P
D
, POWER DISSIPATION (W)
1.2
1.0
0.8
0.6
(Note 3)
(Note 4)
I
C
, COLLECTOR CURRENT (A)
Pw = 10ms
1
Pw = 100ms
0.1
DC
0.4
0.2
0
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
°
C)
Fig. 1 Power Dissipation vs. Ambient Temperature
0.01
0.001
0.1
1
10
100
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
DSS20201L
Document number: DS31605 Rev. 2 - 2
2 of 5
www.diodes.com
December 2008
© Diodes Incorporated
DSS20201L
1.8
1.6
I
C
, COLLECTOR CURRENT (A)
h
FE
, DC CURRENT GAIN
1,000
T
A
= 150°C
1.4
1.2
1.0
I
B
= 5mA
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
I
B
= 4mA
I
B
= 3mA
100
0.8
0.6
0.4
I
B
= 1mA
I
B
= 2mA
NEW PRODUCT
0.2
0
0
1
2
3
4
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 3 Typical Collector Current
vs. Collector-Emitter Voltage
5
10
1
V
CE
= 2V
10
100
1,000
10,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 4 Typical DC Current Gain vs. Collector Current
V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
1
I
C
/I
B
= 10
1.2
V
CE
= 2V
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
1.0
0.1
T
A
= 150°C
T
A
= 85°C
0.8
T
A
= -55°C
0.6
T
A
= 25°C
0.01
T
A
= 25°C
T
A
= -55°C
0.4
T
A
= 85°C
T
A
= 150°C
0.2
0.001
1
0
1
10
100
1,000
10,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 6 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
f = 1MHz
10
100
1,000
10,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 5 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
I
C
/I
B
= 10
V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
1.2
1,000
1.0
0.8
T
A
= -55°C
CAPACITANCE (pF)
100
C
ibo
0.6
T
A
= 25°C
T
A
= 85°C
T
A
= 150°C
0.4
10
C
obo
0.2
0
1
10
100
1,000
10,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 7 Typical Base-Emitter Saturation Voltage
vs. Collector Current
1
0.1
1
10
100
V
R
, REVERSE VOLTAGE (V)
Fig. 8 Typical Capacitance Characteristics
DSS20201L
Document number: DS31605 Rev. 2 - 2
3 of 5
www.diodes.com
December 2008
© Diodes Incorporated
DSS20201L
1,000
f
T
, GAIN-BANDWIDTH PRODUCT (MHz)
100
NEW PRODUCT
10
V
CE
= 2V
f = 100MHz
1
0
10
20 30 40 50 60 70 80 90 100
I
C
, COLLECTOR CURRENT (mA)
Fig. 9 Typical Gain-Bandwidth Product
vs. Collector Current
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.9
R
θJA
(t) = r(t) * R
θ
JA
R
θ
JA
= 168°C/W
P(pk)
D = 0.02
0.01
D = 0.01
D = 0.005
t
1
D = Single Pulse
t
2
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/t
2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t
1
, PULSE DURATION TIME (s)
Fig. 10 Transient Thermal Response
10
100
1,000
Ordering Information
Part Number
DSS20201L-7
Notes:
(Note 6)
Case
SOT-23
Packaging
3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
ZN1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
ZN1
Date Code Key
Year
Code
Month
Code
2008
V
Jan
1
Feb
2
2009
W
Mar
3
2010
X
Apr
4
May
5
YM
2011
Y
Jun
6
2012
Z
Jul
7
Aug
8
2013
A
Sep
9
2014
B
Oct
O
Nov
N
2015
C
Dec
D
DSS20201L
Document number: DS31605 Rev. 2 - 2
4 of 5
www.diodes.com
December 2008
© Diodes Incorporated
DSS20201L
Package Outline Dimensions
A
B C
NEW PRODUCT
H
K
D
J
F
G
L
M
K1
SOT-23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.903 1.10
1.00
K1
-
-
0.400
L
0.45
0.61
0.55
M
0.085 0.18
0.11
0°
8°
-
α
All Dimensions in mm
Suggested Pad Layout
Y
Z
C
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
X
E
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DSS20201L
Document number: DS31605 Rev. 2 - 2
5 of 5
www.diodes.com
December 2008
© Diodes Incorporated
京公网安备 11010802033920号
EEWORLD
