DZT955
LOW V
CE(SAT)
PNP SURFACE MOUNT TRANSISTOR
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Features
•
•
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Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
SOT-223
NEW PRODUCT
Mechanical Data
•
•
•
•
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Case: SOT-223
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.115 grams (approximate)
3 E
C 4
2 C
1 B
TOP VIEW
COLLECTOR
2,4
1
BASE
3
EMITTER
Schematic and Pin Configuration
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
Value
-180
-140
-6
-4
-10
Unit
V
V
V
A
A
Characteristic
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ T
A
= 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ T
A
= 25°C
Operating and Storage Temperature Range
Notes:
1.
2.
3.
Symbol
P
D
R
θ
JA
T
j
, T
STG
Value
1
125
-55 to +150
Unit
W
°C/W
°C
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS31280 Rev. 2 - 2
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Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Min
-180
-140
-6
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
100
100
75
⎯
⎯
⎯
⎯
⎯
Typ
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
10
150
40
85
430
Max
⎯
⎯
⎯
-50
-1
-10
-60
-120
-150
-370
-1110
-950
⎯
300
⎯
⎯
⎯
⎯
⎯
⎯
Unit
V
V
V
nA
μA
nA
Test Condition
I
C
= -100μA, I
E
= 0
I
C
= -10mA, I
B
= 0
I
E
= -100μA, I
C
= 0
V
CB
= -150V, I
E
= 0
V
CB
= -150V, I
E
= 0,
T
A
= 100°C
V
EB
= - 6V, I
C
= 0
B
NEW PRODUCT
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
SWITCHING CHARACTERISTICS
Switching Times
Notes:
4.
V
CE(SAT)
V
BE(SAT)
V
BE(ON)
h
FE
mV
mV
mV
⎯
I
C
= -100mA, I
B
= -5mA
I
C
= -500mA, I
B
= -50mA
I
C
= -1A, I
B
= -100mA
I
C
= -3A, I
B
= -300mA
I
C
= -3A, I
B
= -300mA
I
C
= -3A, V
CE
= -5V
I
C
= -10mA, V
CE
= -5V
I
C
= -1A, V
CE
= -5V
I
C
= -3A, V
CE
= -5V
I
C
= -10A, V
CE
= -5V
B
B
B
B
B
f
T
C
obo
t
on
t
off
MHz
pF
ns
I
C
= -100mA, V
CE
= -10V,
f = 100MHz
V
CB
= -20V, f = 1MHz
I
C
= -1A, I
B1
= -100mA
I
B2
= 100mA, V
CC
= -50V
Measured under pulsed conditions. Pulse width = 300μs. Duty cycle
≤2%.
1.0
P
D
, POWER DISSIPATION (mW)
0.8
I
B
= -5mA
0.8
-I
C
, COLLECTOR CURRENT (A)
0.6
I
B
= -4mA
0.6
0.4
I
B
= -3mA
0.4
I
B
= -2mA
0.2
I
B
= -1mA
0.2
0
25
50
150
100
125
75
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs. Ambient Temperature
0
0
1
2
3
4
5
-V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage
0
DS31280 Rev. 2 - 2
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© Diodes Incorporated
350
300
250
200
150
100
50
0
0.001
0.3
-V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.01
0.1
1
10
0.2
NEW PRODUCT
0.1
0
0.001
0.01
0.1
1
10
-I
C
, COLLECTOR CURRENT (A)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
-V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
-V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
1.2
1.2
1
1.0
0.8
0.8
0.6
0.6
0.4
0.4
0.2
0.2
0
0.001
0
0.001
0.01
0.1
1
10
-I
C
, COLLECTOR CURRENT (A)
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0.01
0.1
1
10
-I
C
, COLLECTOR CURRENT (A)
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
f = 1MHz
f
T
, CURRENT GAIN-BANDWIDTH PRODUCT (MHz)
1,000
200
150
V
CE
= -10V
f = 100MHz
100
100
50
10
0.1
1
10
100
V
R
, REVERSE VOLTAGE (V)
Fig. 7 Typical Output Capacitance Characteristics
0
0
10
20 30 40 50 60 70 80 90 100
-I
C
, COLLECTOR CURRENT (mA)
Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current
DS31280 Rev. 2 - 2
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DZT955
© Diodes Incorporated
Ordering Information
(Note 5)
Device
DZT955-13
Notes:
5.
Packaging
SOT-223
Shipping
2500/Tape & Reel
For packaging details, go to our website at http://www.diodes.com/ap02007.pdf.
NEW PRODUCT
Marking Information
(Top View)
YWW
P414
P414 = Product Type Marking Code
YWW = Date Code Marking
Y = Last digit of year ex: 7 = 2007
WW = Week code 01 - 52
Package Outline Dimensions
SOT-223
Dim Min Max Typ
A
1.55 1.65 1.60
A1
0.010 0.15 0.05
b1
2.90 3.10 3.00
b2
0.60 0.80 0.70
C
0.20 0.30 0.25
D
6.45 6.55 6.50
E
3.45 3.55 3.50
E1
6.90 7.10 7.00
e
—
—
4.60
e1
—
—
2.30
L
0.85 1.05 0.95
Q
0.84 0.94 0.89
All Dimensions in mm
Suggested Pad Layout:
(Dimensions in mm)
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS31280 Rev. 2 - 2
4 of 4
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DZT955
© Diodes Incorporated
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