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MURF1010

Description
10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC
Categorysemiconductor    Discrete semiconductor   
File Size250KB,2 Pages
ManufacturerDIOTECH
Websitehttp://www.kdiode.com/
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MURF1010 Overview

10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC

MURF1005 THRU MURF1060
Reverse Voltage - 50 to 600 Volts
SUPER FAST RECOVERY SILICON RECTIFIER
Forward Current - 10.0 Ampere
FEATURES
Glass Passivated Die Construction
Super-Fast Switching
Low Forward Voltage Drop
Low Reverse Leakage Current
High Surge Current Capability
Plastic Material has UL Flammability
Classification 94V-O
10.2± 0.2
ITO-220AC
4.5± 0.2
3.1
+0.2
-0.1
15.2± 0.5
3.3± 0.1
16.5± 0.3
13.5± 0.5
MECHANICAL DATA
Case: ITO-220AC, Full Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 2.24 grams (approx.)
Mounting Position: Any
Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.
.
.
1
PIN
2
4.0± 0.3
1.4± 0.1
0.6± 0.1
8.2± 0.2
5.0± 0.1
0.6± 0.1
Dimensions in millimeters
PIN 1 +
PIN 3 -
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@T
C
= 105°C
Non-Repetitive Peak Forward Surge
Current 8.3ms Single half sine-wave
superimposed on rated load (JEDEC Method)
Forward Voltage
@I
F
= 10.0A
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
MURF
1005
MURF
1010
MURF
1015
MURF
1020
MURF
1030
MURF
1040
MURF
1060
? 3.2± 0.2
2.6± 0.2
Unit
V
V
A
A
50
35
100
70
150
105
200
140
10.0
150
300
210
400
280
600
420
I
FSM
V
FM
I
RM
t
rr
C
j
T
j
, T
STG
35
70
0.95
1.3
10
500
50
50
-65 to +150
1.7
V
µA
nS
pF
°C
Peak Reverse Current
@T
A
= 25°C
At Rated DC Blocking Voltage @T
A
= 125°C
Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

MURF1010 Related Products

MURF1010 MURF1005 MURF1020 MURF1015 MURF1030 MURF1060 MURF1040
Description 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC 10 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC 10 A, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC 10 A, 300 V, SILICON, RECTIFIER DIODE, TO-220AC 10 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC 10 A, SILICON, RECTIFIER DIODE, TO-220AC
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