MURF3005PT THRU MURF3060PT
Reverse Voltage - 50 to 600 Volts
SUPER FAST RECOVERY SILICON RECTIFIER
Forward Current - 30.0 Ampere
FEATURES
Super-Fast Switching
Low Forward Voltage Drop
Low Reverse Leakage Current
High Surge Current Capability
Plastic Material has UL Flammability
Classification 94V-O
6.5± 0.3
TO-3P
15.8± 0.2
8.0± 0.2
4.9± 0.25
5.0± 0.15
2.0± 0.15
Glass Passivated Die Construction
21± 0.5
3.6± 0.15
PIN
1
2
3
2.4± 0.2
2.2± 0.15
3.0± 0.1
MECHANICAL DATA
Case: TO-3P, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-750, Method 2026
Polarity: See Diagram
Weight: 5.6 grams (approx.)
Mounting Position: Any
Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.
20.4± 0.4
1.2± 0.15
0.6± 0.1
5.4± 0.15
Dimensions in millimeters
PIN 1 -
PIN 3 -
+
Case, PIN 2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@T
C
= 100°C
Non-Repetitive Peak Forward Surge
Current 8.3ms Single half sine-wave
superimposed on rated load (JEDEC Method)
Forward Voltage
@I
F
= 15.0A
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
MURF
MURF
3005PT 3010PT
MURF
3015PT
MURF
3020PT
MURF
3030PT
MURF
MURF
3040PT 3060PT
Unit
50
35
100
70
150
105
200
140
30
300
210
400
280
600
420
V
V
A
I
FSM
V
FM
I
RM
t
rr
C
j
T
j
, T
STG
35
150
0.975
300
1.3
10
500
50
120
-65 to +150
1.7
A
V
µA
nS
pF
°C
Peak Reverse Current
@T
A
= 25°C
At Rated DC Blocking Voltage @T
A
= 100°C
Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
MURF3005PT THRU MURF3060PT
RATINGS AND CHARACTERISTIC CURVES
30
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
100
I
(AV)
, AVERAGE FORWARD CURRENT (A)
24
3005 - 3020
3030 - 3040
10
18
12
3040 - 3060
1.0
6
Pulse width = 300 s
µ
2% duty cycle
0
0
50
100
150
T
C
, CASE TEMPERATURE (
°
C)
Fig. 1 Forward Current Derating Curve
0.1
0
5
0.
0
1.
5
1.
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
300
400
8.3 ms single half-sine-wave
JEDEC method
I
FSM
, PEAK FORWARD SURGE CURRENT (A)
T
j
= 25
°
C
f = 1.0MHz
C
j
, CAPACITANCE (pF)
200
3005PT -
3040PT
100
3060PT
100
0
1
10
100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Maximum Non-Repetitive Surge Current
10
0.1
1.0
10
100
V
R
, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
t
rr
+0.5A
50
Ω
NI (Non-inductive)
10
Ω
NI
Device
Under
Test
(-)
Pulse
Generator
(Note 2)
0A
-0.25A
(+)
50V DC
Approx
(-)
1.0
Ω
NI
Oscilloscope
(Note 1)
(+)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0M
Ω
, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50
Ω
.
-1.0A
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
Microcontroller MCU
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