Transys
Electronics
L I M I T E D
SOT-23-3L Plastic-Encapsulated Transistors
2SB624
FEATURES
Power dissipation
P
CM
:
0.2
W (Tamb=25℃)
TRANSISTOR (PNP)
SOT-23-3L
1. BASE
2. EMITTER
3. COLLECTOR
1. 02
Collector current
-0.7
A
I
CM
:
Collector-base voltage
-30
V
V
(BR)CBO
:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
0.
0. 95¡ À 025
2. 80¡ À 05
0.
1. 60¡ À0. 05
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
*
DC current gain
h
FE(2)
*
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
V
CE(sat)
*
V
BE(on)
*
unless otherwise specified)
Test
conditions
MIN
-30
-25
-5
-0.1
-0.1
110
50
-0.6
-0.6
140
-0.7
V
V
MHz
400
TYP
MAX
UNIT
V
V
V
Ic=-100
µ
A, I
E
=0
Ic= -1 mA, I
B
=0
I
E
= -100
µ
A, I
C
=0
V
CB
=-30 V , I
E
=0
V
EB
= -5V ,
I
C
=0
0. 35
2. 92¡ À0. 05
1. 9
µ
A
µ
A
V
CE
= -1V, I
C
= -100mA
V
CE
=-1V, I
C
= -700mA
I
C
=-700 mA, I
B
= -70mA
V
CE
=-6V, I
C
=-10mA
V
CE
= -6V, I
C
= -10mA
f
T
* Pulse test : Pulse width
≤350µs,Duty
Cycle≤2%.
CLASSIFICATION OF h
FE(1)
Marking
Range
BV1
110-180
BV2
135-220
BV3
170-270
BV4
200-320
BV5
250-400
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