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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2488
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK2488 is N-Channel MOS Field Effect Transistors designed for high voltage switching applications.
FEATURES
•
Low on-state resistance
R
DS (on)
= 1.2
Ω
MAX. (V
GS
= 10 V, I
D
= 5.0 A)
•
Low input capacitance
C
iss
= 2 900 pF TYP.
•
High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)*
Total Power Dissipation (T
c
= 25 ˚C)
Total Power Dissipation (T
A
= 25 ˚C)
Channel Temperature
Storage Temperature
Single Avalanche Current**
Single Avalanche Energy**
*
PW
≤
10
µ
s, Duty Cycle
≤
1 %
V
DSS
V
GSS
I
D (DC)
I
D (pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
900
±30
±10
±20
150
3.0
150
–55 to +150
10
294
V
V
A
A
W
W
˚C
˚C
A
mJ
**
Starting T
ch
= 25 ˚C, R
G
= 25
Ω,
V
GS
= 20 V
→
0
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D10284EJ3V0DS00 (3rd edition)
Date Published November 2006 N CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what." field.
Embedded System
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