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SF24

Description
2 A, SILICON, RECTIFIER DIODE, DO-15
Categorysemiconductor    Discrete semiconductor   
File Size297KB,2 Pages
ManufacturerDIOTECH
Websitehttp://www.kdiode.com/
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SF24 Overview

2 A, SILICON, RECTIFIER DIODE, DO-15

SF21 THRU SF28
Reverse Voltage - 50 to 600 Volts
SUPER FAST RECOVERY SILICON RECTIFIER
Forward Current - 2.0 Ampere
FEATURES
DO-15
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Super fast switching for high efficiency
Low reverse leakage
High forward surge current capability
High temperature soldering guarantteed:
250 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
1.0 (25.4)
MIN.
0.140(3.6)
0.104(2.6)
DIA.
MECHANICAL DATA
Case
: JEDEC DO-15 molded plastic body
Terminals
: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity
: Color band denotes cathode end
Mounting Position
: Any
Weight
:0.014 ounce, 0.40 grams
0.300(7.6)
0.230(5.8)
1.0 (25.4)
MIN.
0.034(0.9)
0.028(0.7)
DIA.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for current capacitive load current derate by 20%.
Characteristic
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375
(9.5mm) lead length at T
A
=55 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 2.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
SYMBOLS
SF21
SF22
SF23
SF24
SF25
SF26
SF28
UNITS
V
V
V
A
A
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
JA
T
J
,
T
STG
50
35
50
100
70
100
150
105
150
200
140
200
2.0
50.0
300
210
300
400
280
400
600
420
600
0.95
5.0
50.0
35
60.0
50.0
-65 to +150
1.25
1.7
V
µA
ns
30.0
pF
C/W
C
Note:
1.Reverse recovery condition I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.Thermal resistance from junction to ambient at 0.375
(9.5mm)lead length,P.C.B. mounted

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