2DB1119S
PNP SURFACE MOUNT TRANSISTOR
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Features
NEW PRODUCT
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Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
SOT89-3L
Mechanical Data
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Case: SOT89-3L
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.072 grams (approximate)
3 E
C 4
2 C
1 B
TOP VIEW
COLLECTOR
2,4
1
BASE
3
EMITTER
Schematic and Pin Configuration
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
CM
I
C
Value
-25
-25
-5
-2
-1
Unit
V
V
V
A
A
Characteristic
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ T
A
= 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ T
A
= 25°C
Operating and Storage Temperature Range
Symbol
P
D
R
θ
JA
T
j
, T
STG
Value
1
125
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Notes:
1.
2.
3.
4.
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(SAT)
V
BE(SAT)
h
FE
Min
-25
-25
-5
⎯
⎯
⎯
⎯
140
40
⎯
⎯
Typ
⎯
⎯
⎯
⎯
⎯
-0.15
-0.85
⎯
⎯
200
12
Max
⎯
⎯
⎯
-0.1
-0.1
-0.7
-1.2
280
⎯
⎯
⎯
Unit
V
V
V
μA
μA
V
V
⎯
⎯
MHz
pF
Conditions
I
C
= -10μA, I
E
= 0
I
C
= -1mA, I
B
= 0
I
E
= -10μA, I
C
= 0
V
CB
= -20V, I
E
= 0
V
EB
= -4V, I
C
= 0
I
C
= -500mA, I
B
= -50mA
I
C
= -500mA, I
B
= -50mA
V
CE
= -2V, I
C
= -50mA
V
CE
= -2V, I
C
= -1A
V
CE
= -10V, I
C
= -50mA
f = 100MHz
V
CB
= -10V, I
E
= 0,
f = 1MHz
f
T
C
ob
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
Measured under pulsed conditions. Pulse width = 300μs. Duty cycle
≤2%.
DS31298 Rev. 2 - 2
1 of 4
www.diodes.com
2DB1119S
© Diodes Incorporated
1.0
1.2
P
D
, POWER DISSIPATION (W)
0.8
1.0
0.8
NEW PRODUCT
0.6
0.6
0.4
0.4
0.2
0.2
0
0
25
50
75
100
125
T
A
, AMBIENT TEMPERATURE (
°
C)
Fig. 1 Power Dissipation
vs. Ambient Temperature (Note 3)
150
0
0
1
2
3
4
5
-V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
350
300
0.8
0.6
250
200
0.4
150
100
50
0
-I
C
, COLLECTOR CURRENT (A)
Fig. 3 Typical DC Current Gain
vs. Collector Current
0.2
0
-I
C,
COLLECTOR CURRENT (A)
Fig. 4 Typical Collector-Emitter Saturation
Voltage vs. Collector Current
1
-I
C,
COLLECTOR CURRENT (A)
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
-I
C,
COLLECTOR CURRENT (A)
Fig. 6 Typical Base-Emitter Saturation
Voltage vs. Collector Current
DS31298 Rev. 2 - 2
2 of 4
www.diodes.com
2DB1119S
© Diodes Incorporated
135
120
105
f
T
, CURRENT GAIN-BANDWIDTH PRODUCT (MHz)
150
250
200
NEW PRODUCT
90
75
60
45
30
15
0
V
R,
REVERSE VOLTAGE (V)
Fig. 7 Typical Capacitance Characteristics
150
100
50
V
CE
= -10V
f = 100MHz
0
0
10
20 30 40 50 60 70 80 90 100
-I
C
, COLLECTOR CURRENT (mA)
Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current
Ordering Information
(Note 5)
Device
2DB1119S-13
Notes:
5.
Packaging
SOT89-3L
Shipping
2500/Tape & Reel
For packaging details, please see below or go to our website at http://www.diodes.com/ap02007.pdf.
Marking Information
(Top View)
YWW
P12BS
P12BS = Product Type Marking Code
YWW = Date Code Marking
Y = Last digit of year ex: 7 = 2007
WW = Week code 01 - 52
Package Outline Dimensions
D1
0
20
0.
R
C
SOT89-3L
Dim
A
B
H
Min
1.40
0.45
0.37
0.35
4.40
1.50
2.40
—
3.95
0.90
Max
1.60
0.55
0.47
0.43
4.60
1.70
2.60
—
4.25
1.20
Typ
1.50
0.50
0.42
0.38
4.50
1.60
2.50
1.50
4.10
1.05
E
B1
C
D
D1
E
e
H
L
B
B1
8°
e
(4X
)
L
A
All Dimensions in mm
D
DS31298 Rev. 2 - 2
3 of 4
www.diodes.com
2DB1119S
© Diodes Incorporated
Suggested Pad Layout
1.7
NEW PRODUCT
2.7
0.4
1.9
1.3
0.9
3.0
Unit: mm
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS31298 Rev. 2 - 2
4 of 4
www.diodes.com
2DB1119S
© Diodes Incorporated
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