SMBJ8.0A datasheet, PDF - EEWORLD Datasheet

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SMBJ8.0A: Description600 W, UNIDIRECTIONAL, SILICON, TVS DIODE; Categorysemiconductor Discrete semiconductor; File Size374KB，3 Pages; ManufacturerDIOTECH; Websitehttp://www.kdiode.com/

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SMBJ8.0A Overview

600 W, UNIDIRECTIONAL, SILICON, TVS DIODE

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SMBJ5.0 THRU SMBJ440CA

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

Stand - Off Voltage - 5.0 to 440 Volts

Peak Pulse Power - 600 Watt

FEATURES

●

Glass Passivated Die Construction

Uni- and Bi-Directional Versions Available

Excellent Clamping Capability

Plastic Case Material has UL Flammability

Classification Rating 94V-O

Typical IR less than 1μA above 10V

Fast Response Time : typically less than 1.0ns from 0v to VBR

SMB ( DO-214AA )

.083(2.11)

.075(1.91)

.155(3.94)

.130(3.30)

.185(4.70)

.160(4.06)

MECHANICAL DATA

●

.012(.305)

.006(.152)

.096(2.44)

.084(2.13)

.060(1.52)

.030(0.76)

.008(.203)

.002(.051)

Case: JEDEC SMB(DO-214AA), Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band Except Bi-Directional

Marking: Device Code

Weight: 0.093 grams (approx.)

.220(5.59)

.200(5.08)

Dimensions in inches and (millimeters)

Maximum Ratings and Electrical Characteristics

Characteristic

Peak Pulse Power Dissipation 10/1000µS Waveform (Note 1, 2) Figure 3

Peak Pulse Current on 10/1000µS Waveform (Note 1) Figure 4

Peak Forward Surge Current 8.3ms Single Half Sine-Wave

Superimposed on Rated Load (JEDEC Method) (Note 2, 3)

Operating and Storage Temperature Range

=25°C unless otherwise specified

Symbol

PPM

FSM

, T

STG

Value

600 Minimum

See Table 1

100

-55 to +150

Unit

°C

Note: 1. Non-repetitive current pulse per Figure 4 and derated above T

= 25°C per Figure 1.

2. Mounted on 5.0mm

(0.013mm thick) land area.

3. Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minutes maximum.

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