DSS4320T
LOW V
CE(SAT)
NPN SURFACE MOUNT TRANSISTOR
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Features
•
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Epitaxial Planar Die Construction
Ideal for Medium Power Amplification and Switching
Complimentary PNP Type Available (DSS5320T)
Lead Free By Design/RoHS Compliant (Note 1)
“Green” Device (Note 2)
Mechanical Data
•
•
•
•
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Case: SOT-23
Case Material: Molded Plastic, "Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish — Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.008 grams (approximate)
C
NEW PRODUCT
B
Top View
E
Device Schematic
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
CM
I
CRP
I
C
I
B
Value
20
20
5
5
3
2
0.5
Unit
V
V
V
A
A
A
A
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Repetitive Peak Pulse Current (Note 3)
Continuous Collector Current
Base Current
Thermal Characteristics
Characteristic
Power Dissipation (Note 4) @ T
A
= 25°C
Thermal Resistance, Junction to Ambient Air (Note 4) @ T
A
= 25°C
Operating and Storage Temperature Range
Notes:
1.
2.
3.
4.
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
600
209
-55 to +150
Unit
mW
°C/W
°C
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Operated under pulse conditions: Pulse width
≤
100ms, duty cycle
≤
0.25.
Device mounted on FR-4 PCB; with minimum recommended pad layout.
DSS4320T
Document number: DS31621 Rev. 2 - 2
1 of 5
www.diodes.com
November 2008
© Diodes Incorporated
DSS4320T
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
ON CHARACTERISTICS (Note 5)
@T
A
= 25°C unless otherwise specified
Symbol
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
Min
⎯
⎯
⎯
20
20
5
220
220
220
200
150
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
100
⎯
Typ
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
70
⎯
35
⎯
⎯
⎯
⎯
⎯
Max
100
50
100
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
70
120
230
210
310
105
1.1
1.2
1.2
⎯
35
Unit
nA
μA
nA
V
V
V
Test Conditions
V
CB
= 20V, I
E
= 0
V
CB
= 20V, I
E
= 0, T
A
= 150°C
V
EB
= 5V, I
C
= 0
I
C
= 100μA
I
C
= 10mA
I
E
= 100μA
V
CE
= 2V, I
C
= 0.1A
V
CE
= 2V, I
C
= 0.5A
V
CE
= 2V, I
C
= 1A
V
CE
= 2V, I
C
= 2A
V
CE
= 2V, I
C
= 3A
I
C
= 0.5A, I
B
= 50mA
I
C
= 1A, I
B
= 50mA
I
C
= 2A, I
B
= 40mA
I
C
= 2A, I
B
= 200mA
I
C
= 3A, I
B
= 300mA
I
E
= 2A, I
B
= 200mA
I
C
= 2A, I
B
= 40mA
I
C
= 3A, I
B
= 300mA
V
CE
= 2V, I
C
= 1A
V
CE
= 5V, I
C
= 100mA,
f = 100MHz
V
CB
= 10V, f = 1MHz
NEW PRODUCT
DC Current Gain
h
FE
⎯
Collector-Emitter Saturation Voltage
V
CE(SAT)
mV
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
Notes:
R
CE(SAT)
V
BE(SAT)
V
BE(ON)
f
T
C
ob
mΩ
V
V
V
MHz
pF
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle
≤2%.
800
700
10
P
D
, POWER DISSIPATION (W)
600
500
400
300
200
100
0
0
R
θJA
= 209°C/W
I
C
, COLLECTOR CURRENT (A)
Pw = 10ms
1
Pw = 100ms
0.1
DC
0.01
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
°
C)
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 4)
0.001
0.1
1
10
100
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
DSS4320T
Document number: DS31621 Rev. 2 - 2
2 of 5
www.diodes.com
November 2008
© Diodes Incorporated
DSS4320T
1.8
1.6
I
C
, COLLECTOR CURRENT (A)
1.4
1.2
1.0
I
B
= 3mA
I
B
= 5mA
1,000
V
CE
= 2V
T
A
= 150°C
h
FE
, DC CURRENT GAIN
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
I
B
= 4mA
100
0.8
0.6
0.4
I
B
= 1mA
I
B
= 2mA
NEW PRODUCT
0.2
0
0
1
2
3
4
5
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 3 Typical Collector Current
vs. Collector-Emitter Voltage
V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
1.2
V
CE
= 2V
10
1
10
100
1,000
10,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 4 Typical DC Current Gain vs. Collector Current
1
I
C
/I
B
= 10
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
1.0
0.1
T
A
= 150°C
T
A
= 85°C
T
A
= 25°C
0.8
T
A
= -55°C
0.6
T
A
= 25°C
0.01
T
A
= -55°C
0.4
T
A
= 85°C
0.2
T
A
= 150°C
0.001
1
10
100
1,000
10,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 5 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
0
1
10
100
1,000
10,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 6 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
1.2
I
C
/I
B
= 10
1,000
f = 1MHz
1.0
CAPACITANCE (pF)
0.8
T
A
= -55°C
100
C
ibo
0.6
T
A
= 25°C
T
A
= 85°C
T
A
= 150°C
0.4
10
C
obo
0.2
0
1
10
100
1,000
10,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 7 Typical Base-Emitter Saturation Voltage
vs. Collector Current
1
0.1
1
10
100
V
R
, REVERSE VOLTAGE (V)
Fig. 8 Typical Capacitance Characteristics
DSS4320T
Document number: DS31621 Rev. 2 - 2
3 of 5
www.diodes.com
November 2008
© Diodes Incorporated
DSS4320T
1,000
f
T
, GAIN-BANDWIDTH PRODUCT (MHz)
100
10
NEW PRODUCT
V
CE
= 5V
f = 100MHz
1
0
10
20 30 40 50 60 70 80 90 100
I
C
, COLLECTOR CURRENT (mA)
Fig. 9 Typical Gain-Bandwidth Product
vs. Collector Current
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.9
R
θJA
(t) = r(t) * R
θ
JA
R
θ
JA
= 190°C/W
P(pk)
D = 0.02
0.01
D = 0.01
D = 0.005
t
1
D = Single Pulse
t
2
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/t
2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t
1
, PULSE DURATION TIME (s)
Fig. 10 Transient Thermal Response
10
100
1,000
Ordering Information
Part Number
DSS4320T-7
Notes:
(Note 6)
Case
SOT-23
Packaging
3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
ZN4 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
ZN4
Date Code Key
Year
Code
Month
Code
2008
V
Jan
1
Feb
2
2009
W
Mar
3
2010
X
Apr
4
May
5
YM
2011
Y
Jun
6
2012
Z
Jul
7
Aug
8
2013
A
Sep
9
2014
B
Oct
O
Nov
N
2015
C
Dec
D
DSS4320T
Document number: DS31621 Rev. 2 - 2
4 of 5
www.diodes.com
November 2008
© Diodes Incorporated
DSS4320T
Package Outline Dimensions
A
B C
H
NEW PRODUCT
K
D
J
F
G
K1
L
M
SOT-23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.903 1.10
1.00
K1
-
-
0.400
L
0.45
0.61
0.55
M
0.085 0.18
0.11
0°
8°
-
α
All Dimensions in mm
Suggested Pad Layout
Y
Z
C
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
X
E
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DSS4320T
Document number: DS31621 Rev. 2 - 2
5 of 5
www.diodes.com
November 2008
© Diodes Incorporated
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