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DSS4240T

Description
2000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size96KB,5 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric View All

DSS4240T Overview

2000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR

DSS4240T Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current2 A
Maximum Collector-Emitter Voltage40 V
Processing package descriptionGREEN, PLASTIC PACKAGE-3
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Transistor typeGENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor150
Rated crossover frequency100 MHz
DSS4240T
LOW V
CE(SAT)
NPN SURFACE MOUNT TRANSISTOR
Features
Ideal for Medium Power Amplification and Switching
Ultra Low Collector-Emitter Saturation Voltage
Complimentary NPN Type Available (DSS5240T)
Lead Free By Design/RoHS Compliant (Note 1)
“Green” Device (Note 2)
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic, "Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish — Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.008 grams (approximate)
C
NEW PRODUCT
B
Top View
E
Device Schematic
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
BM
Value
40
40
5
3
2
0.3
Unit
V
V
V
A
A
A
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Collector Current
Continuous Collector Current
Peak Base Current
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ T
A
= 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ T
A
= 25°C
Operating and Storage Temperature Range
Notes:
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
600
209
-55 to +150
Unit
mW
°C/W
°C
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
DSS4240T
Document number: DS31623 Rev. 3 - 2
1 of 5
www.diodes.com
May 2009
© Diodes Incorporated
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