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M5M4V4800RT-8T

Description
Fast Page DRAM, 512KX8, 80ns, CMOS, PDSO28, 0.400 INCH, PLASTIC, TSOP2-28
Categorystorage    storage   
File Size805KB,22 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric View All

M5M4V4800RT-8T Overview

Fast Page DRAM, 512KX8, 80ns, CMOS, PDSO28, 0.400 INCH, PLASTIC, TSOP2-28

M5M4V4800RT-8T Parametric

Parameter NameAttribute value
MakerMitsubishi
Parts packaging codeTSOP
package instructionTSOP2-R,
Contacts28
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE
Maximum access time80 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 codeR-PDSO-G28
length18.41 mm
memory density4194304 bit
Memory IC TypeFAST PAGE DRAM
memory width8
Number of functions1
Number of ports1
Number of terminals28
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize512KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2-R
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Certification statusNot Qualified
refresh cycle1024
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
width10.16 mm

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