2SD1592-K datasheet, PDF - EEWORLD Datasheet

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2SD1592-K: Description5A, 300V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size206KB，6 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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2SD1592-K Overview

5A, 300V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3

2SD1592-K Parametric

Parameter Name	Attribute value
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	ISOLATED
Maximum collector current (IC)	5 A
Collector-emitter maximum voltage	300 V
Configuration	DARLINGTON WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	1000
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	30 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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To our customers,

Old Company Name in Catalogs and Other Documents

On April 1

, 2010, NEC Electronics Corporation merged with Renesas Technology

Corporation, and Renesas

Electronics Corporation

took over all the business of both

companies.

Therefore, although the old company name remains in this document, it is a valid

Renesas

Electronics document. We appreciate your understanding.

Renesas Electronics website: http://www.renesas.com

April 1

, 2010

Renesas Electronics Corporation

Issued by:

Renesas Electronics Corporation

(http://www.renesas.com)

Send any inquiries to http://www.renesas.com/inquiry.

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“Standard”:

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(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-

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2SD1592-K Related Products

	2SD1592-K	2SD1592-L	2SD1592-M
Description	5A, 300V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3	5A, 300V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3	5A, 300V, NPN, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3	3
Reach Compliance Code	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED	ISOLATED
Maximum collector current (IC)	5 A	5 A	5 A
Collector-emitter maximum voltage	300 V	300 V	300 V
Configuration	DARLINGTON WITH BUILT-IN RESISTOR	DARLINGTON WITH BUILT-IN RESISTOR	DARLINGTON WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	1000	600	400
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
Number of components	1	1	1
Number of terminals	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	NPN	NPN	NPN
Maximum power dissipation(Abs)	30 W	30 W	30 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Base Number Matches	1	1	1

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