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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2858
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The 2SK2858 is a switching device which can be driven directly by a
2.5 V power source.
<R>
PACKAGE DRAWING (Unit : mm)
2.1±0.1
1.25±0.1
The 2SK2858 has excellent switching characteristics, and is suitable for
use as a high-speed switching device in digital circuits.
0.65
0.65
2.0±0.2
0.3
+0.1
−0
2
FEATURES
•
Can be driven by a 2.5 V power source
•
Low gate cut-off voltage
Marking
0.3
ORDERING INFORMATION
PART NUMBER
2SK2858
PACKAGE
SC-70 (SSP)
0.9±0.1
0 to 0.1
0.15
+0.1
−0
0.3
+0.1
−0
1
3
Marking: G24
1. Source
2. Gate
3. Drain
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Note
Total Power Dissipation
Channel Temperature
Storage Temperature
Note
PW
≤
10
μ
s, Duty Cycle
≤
1%
Remark
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
30
±20
±0.1
±0.4
150
150
–55 to +150
V
V
A
A
mW
°C
°C
Gate
Body
Diode
<R>
EQUIVALENT CIRCUIT
Drain
Gate
Protection
Diode
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D11706EJ4V0DS00 (4th edition)
Date Published February 2006 NS CP(K)
Printed in Japan
1996, 2006
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
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