2DB1694
LOW V
CE(SAT)
PNP SURFACE MOUNT TRANSISTOR
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Features
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Epitaxial Planar Die Construction
Low Collector-Emitter Saturation Voltage
Ideal for Low Power Amplification and Switching
Complementary NPN Type Available (2DD2656)
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 1)
"Green Device" (Note 2)
Mechanical Data
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Case: SOT-323
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish
−
Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
C
NEW PRODUCT
B
Top View
E
Device Schematic
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
Value
-30
-30
-6
-1
-2
Unit
V
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ T
A
= 25°C
Thermal Resistance, Junction to Ambient (Note 3) @ T
A
= 25°C
Power Dissipation (Note 4) @ T
A
= 25°C
Thermal Resistance, Junction to Ambient (Note 4) @ T
A
= 25°C
Operating and Storage Temperature Range
Symbol
P
D
R
θ
JA
P
D
R
θ
JA
T
J
, T
STG
Value
300
417
500
250
-55 to +150
Unit
mW
°C/W
mW
°C/W
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(SAT)
h
FE
C
obo
f
T
Min
-30
-30
-6
⎯
⎯
⎯
270
⎯
⎯
Typ
⎯
⎯
⎯
⎯
⎯
-180
⎯
16
300
Max
⎯
⎯
⎯
-0.1
-0.1
-380
680
⎯
⎯
Unit
V
V
V
μA
μA
mV
⎯
pF
MHz
Conditions
I
C
= -10μA, I
E
= 0
I
C
= -1mA, I
B
= 0
I
E
= -10μA, I
C
= 0
V
CB
= -30V, I
E
= 0
V
EB
= -6V, I
C
= 0
I
C
= -500mA, I
B
= -25mA
V
CE
= -2V, I
C
= -100mA
V
CB
= -10V, I
E
= 0,
f = 1MHz
V
CE
= -2V, I
C
= -100mA,
f = 100MHz
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Notes:
1.
2.
3.
4.
5.
No purposefully added lead.
Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB with minimum recommended pad layout.
Device mounted on FR-4 PCB with 1 inch
2
copper pad layout.
Measured under pulsed conditions. Pulse width = 300μs. Duty cycle
≤2%.
2DB1694
Document number: DS31640 Rev. 2 - 2
1 of 4
www.diodes.com
December 2008
© Diodes Incorporated
2DB1694
0.6
1.0
0.9
-I
C
, COLLECTOR CURRENT (A)
I
B
= -5mA
P
D
, POWER DISSIPATION (W)
0.5
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
I
B
= -1mA
I
B
= -4mA
I
B
= -3mA
0.4
NEW PRODUCT
0.3
(Note 4)
I
B
= -2mA
0.2
(Note 3)
0.1
0
0
50
75 100 125 150 175 200
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature
25
0
0
1
2
3
4
5
-V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
1,000
T
A
= 150°C
T
A
= 85°C
T
A
= 25°C
V
CE
= -2V
1
I
C
/I
B
= 20
T
A
= -55°C
-V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
h
FE
, DC CURRENT GAIN
100
0.1
T
A
= 150°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
10
0.1
1
10
100
1,000 10,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain vs. Collector Current
-V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
0.01
0.1
1
10
100
1,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
-V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
1.2
V
CE
= -2V
1.2
I
C
/I
B
= 20
1.0
1.0
0.8
T
A
= -55°C
0.8
T
A
= -55°C
0.6
T
A
= 25°C
0.6
T
A
= 25°C
0.4
T
A
= 85°C
0.4
T
A
= 85°C
0.2
T
A
= 150°C
0.2
0
T
A
= 150°C
0
0.1
1
10
100
1,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0.1
1
10
100
1,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
2DB1694
Document number: DS31640 Rev. 2 - 2
2 of 4
www.diodes.com
December 2008
© Diodes Incorporated
2DB1694
Suggested Pad Layout
Y
Z
NEW PRODUCT
C
Dimensions Value (in mm)
Z
2.8
X
0.7
Y
0.9
C
1.9
E
1.0
X
E
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
2DB1694
Document number: DS31640 Rev. 2 - 2
4 of 4
www.diodes.com
December 2008
© Diodes Incorporated
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