2DB1713
LOW V
CE(SAT)
PNP SURFACE MOUNT TRANSISTOR
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Features
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Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Complementary NPN Type Available (2DD2678)
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Mechanical Data
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•
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Case: SOT89-3L
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.072 grams (approximate)
NEW PRODUCT
COLLECTOR
2,4
3 E
C 4
2 C
1 B
TOP VIEW
Pin Out Configuration
1
BASE
3
EMITTER
Top View
Device Schematic
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
CM
I
C
Value
-15
-12
-6
-6
-3
Unit
V
V
V
A
A
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ T
A
= 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ T
A
= 25°C
Power Dissipation (Note 4) @ T
A
= 25°C
Thermal Resistance, Junction to Ambient Air (Note 4) @ T
A
= 25°C
Operating and Storage Temperature Range
Symbol
P
D
R
θ
JA
P
D
R
θ
JA
T
J
, T
STG
Value
0.9
139
2
62.5
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(SAT)
h
FE
C
obo
f
T
Min
-15
-12
-6
⎯
⎯
⎯
270
⎯
⎯
Typ
⎯
⎯
⎯
⎯
⎯
-120
⎯
40
180
Max
⎯
⎯
⎯
-0.1
-0.1
-250
680
⎯
⎯
Unit
V
V
V
μA
μA
mV
⎯
pF
MHz
Conditions
I
C
= -10μA, I
E
= 0
I
C
= -1mA, I
B
= 0
I
E
= -10μA, I
C
= 0
V
CB
= -15V, I
E
= 0
V
EB
= -6V, I
C
= 0
I
C
= -1.5A, I
B
= -30mA
V
CE
= -2V, I
C
= -500mA
V
CB
= -10V, I
E
= 0,
f = 1MHz
V
CE
= -2V, I
C
= -100mA,
f = 100MHz
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Notes:
1.
2.
3.
4.
5.
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB with minimum recommended pad layout.
Device mounted on FR-4 PCB with 1 inch
2
copper pad layout.
Measured under pulsed conditions. Pulse width = 300μs. Duty cycle
≤2%.
2DB1713
Document number: DS31634 Rev. 2 - 2
1 of 4
www.diodes.com
December 2008
© Diodes Incorporated
2DB1713
2.0
3.0
2.5
I
B
= -5mA
-I
C
, COLLECTOR CURRENT (A)
P
D
, POWER DISSIPATION (W)
1.6
2.0
I
B
= -4mA
1.2
Note 4
1.5
I
B
= -3mA
0.8
1.0
I
B
= -2mA
NEW PRODUCT
0.4
Note 3
0.5
I
B
= -1mA
0
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
°
C)
Fig. 1 Power Dissipation vs. Ambient Temperature
0
0
1
2
3
4
5
-V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
10,000
V
CE
= -2V
1
I
C
/I
B
= 20
1,000
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
T
A
= 150°C
-V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
h
FE
, DC CURRENT GAIN
0.1
T
A
= 150°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
100
0.01
10
1
0.001
1
10
100
1,000
10,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
I
C
/I
B
= 20
10
100
1,000
10,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain vs. Collector Current
-V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
1.2
-V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
1.2
V
CE
= -2V
1.0
1.0
0.8
T
A
= -55°C
0.8
T
A
= -55°C
0.6
T
A
= 25°C
0.6
T
A
= 25°C
T
A
= 85°C
T
A
= 150°C
0.4
T
A
= 85°C
0.4
0.2
T
A
= 150°C
0.2
0
1
0
1
10
100
1,000
10,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
10
100
1,000
10,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
2DB1713
Document number: DS31634 Rev. 2 - 2
2 of 4
www.diodes.com
December 2008
© Diodes Incorporated
2DB1713
1,000
f = 1MHz
1,000
f
T
, GAIN-BANDWIDTH PRODUCT (MHz)
CAPACITANCE (pF)
100
100
C
ibo
10
NEW PRODUCT
C
obo
V
CE
= -2V
f = 100MHz
10
0.1
1
10
100
V
R
, REVERSE VOLTAGE (V)
Fig. 7 Typical Capacitance Characteristics
1
0
10
20 30 40 50 60 70 80 90 100
-I
C
, COLLECTOR CURRENT (mA)
Fig. 8 Typical Gain-Bandwidth Product
vs. Collector Current
Ordering Information
Part Number
2DB1713-13
Notes:
(Note 6)
Case
SOT89-3L
Packaging
2500/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
YWW
1713
1713 = Product Type Marking Code
YWW = Date Code Marking
Y = Last digit of year (ex: 8 = 2008)
WW = Week code 01 - 52
Package Outline Dimensions
D1
.
R0
20
0
C
E
H
B
B1
8°
(4 X
)
L
e
A
SOT89-3L
Dim Min Max Typ
A
1.40 1.60 1.50
B
0.45 0.55 0.50
B1
0.37 0.47 0.42
C
0.35 0.43 0.38
D
4.40 4.60 4.50
D1
1.50 1.70 1.60
E
2.40 2.60 2.50
e
—
—
1.50
H
3.95 4.25 4.10
L
0.90 1.20 1.05
All Dimensions in mm
D
2DB1713
Document number: DS31634 Rev. 2 - 2
3 of 4
www.diodes.com
December 2008
© Diodes Incorporated
2DB1713
Suggested Pad Layout
X1
Y1
X3
Y3
X2
Y2
NEW PRODUCT
Dimensions Value (in mm)
X1
1.7
X2
0.9
X3
0.4
Y1
2.7
Y2
1.3
Y3
1.9
C
3.0
C
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
2DB1713
Document number: DS31634 Rev. 2 - 2
4 of 4
www.diodes.com
December 2008
© Diodes Incorporated
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