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2DD2652

Description
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
File Size79KB,4 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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2DD2652 Overview

LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

2DD2652
LOW V
CE(SAT)
NPN SURFACE MOUNT TRANSISTOR
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Features
Epitaxial Planar Die Construction
Low Collector-Emitter Saturation Voltage
Ideal for Low Power Amplification and Switching
Complementary PNP Type Available (2DB1689)
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 1)
"Green Device" (Note 2)
Mechanical Data
Case: SOT-323
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
C
NEW PRODUCT
B
Top View
E
Device Schematic
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
Value
15
12
6
1.5
3
Unit
V
V
V
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ T
A
= 25°C
Thermal Resistance, Junction to Ambient (Note 3) @ T
A
= 25°C
Power Dissipation (Note 4) @ T
A
= 25°C
Thermal Resistance, Junction to Ambient (Note 4) @ T
A
= 25°C
Operating and Storage Temperature Range
Symbol
P
D
R
θ
JA
P
D
R
θ
JA
T
J
, T
STG
Value
300
417
500
250
-55 to +150
Unit
mW
°C/W
mW
°C/W
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(SAT)
h
FE
C
obo
f
T
Min
15
12
6
270
Typ
80
11
260
Max
0.1
0.1
200
680
Unit
V
V
V
μA
μA
mV
pF
MHz
Conditions
I
C
= 10μA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10μA, I
C
= 0
V
CB
= 15V, I
E
= 0
V
EB
= 6V, I
C
= 0
I
C
= 500mA, I
B
= 25mA
V
CE
= 2V, I
C
= 200mA
V
CB
= 10V, I
E
= 0,
f = 1MHz
V
CE
= 2V, I
C
= 100mA,
f = 100MHz
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Notes:
1.
2.
3.
4.
5.
No purposefully added lead.
Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB with minimum recommended pad layout.
Device mounted on FR-4 PCB with 1 inch
2
copper pad layout.
Measured under pulsed conditions. Pulse width = 300μs. Duty cycle
≤2%.
2DD2652
Document number: DS31633 Rev. 2 - 2
1 of 4
www.diodes.com
December 2008
© Diodes Incorporated

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