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DATA SHEET
SILICON POWER TRANSISTOR
2SD560
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SD560 is a mold power transistor developed for low-
frequency power amplifiers and low-speed switching. This transistor is
ideal for direct driving from the IC output of devices such as pulse
motor drivers and relay drivers, and PC terminals.
ORDERING INFORMATION
Ordering Name
2SD560
Package
TO-220AB
FEATURES
• C-to-E reverse diode inserted
• Low collector saturation voltage
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
I
B(DC)
P
T
T
j
T
stg
T
C
= 25°C
T
A
= 25°C
PW
≤
10 ms,
duty cycle
≤
50%
Conditions
Ratings
150
100
7.0
±5.0
±8.0
0.5
30
1.5
150
−55
to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
INTERNAL EQUIVALENT CIRCUIT
1. Base
2. Collector
3. Emitter
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14863EJ3V0DS00 (3rd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
Test/Measurement
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