DATA SHEET
SILICON POWER TRANSISTOR
2SA1744
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SA1744 is a power transistor developed for high-speed
switching and features a high h
FE
at Low V
CE(sat)
. This transistor is
ideal for use as a driver in DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• High h
FE
and low V
CE(sat)
:
h
FE
≥
100 (V
CE
=
−2
V, I
C
=
−3
A)
V
CE(sat)
≤
0.3 V (I
C
=
−8
A, I
B
=
−0.4
A)
• Full-mold package that does not require an insulating board or
bushing
Electrode Connection
1. Base
2. Collector
3. Emitter
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T
(Tc = 25°C)
P
T
(Ta = 25°C)
T
j
T
stg
Ratings
−100
−60
−7.0
−15
−30
−7.5
30
2.0
150
−55
to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
* PW
≤
300
µ
s, duty cycle
≤
10%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13160EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
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Parameter
Collector to emitter voltage
Collector to emitter voltage
Symbol
V
CEO(SUS)
V
CEX(SUS)
°
Conditions
MIN.
−60
−60
−10
−1.0
−10
−1.0
−10
100
100
60
−0.3
−0.5
−1.2
−1.5
300
80
0.3
1.5
0.3
V
V
V
V
pF
MHz
400
TYP.
MAX.
Unit
V
V
I
C
=
−8.0
A, I
B
=
−0.8
A, L = 1 mH
I
C
=
−8.0
A, I
B1
=
−I
B2
=
−0.8
A,
V
BE(OFF)
= 1.5 V, L = 180
µ
H, clamped
V
CB
=
−60
V, I
E
= 0
V
CE
=
−60
V, R
BE
= 50
Ω,
T
A
= 125°C
V
CE
=
−60
V, V
BE(OFF)
= 1.5 V
V
CE
=
−60
V, V
BE(OFF)
= 1.5 V,
T
A
= 125°C
V
EB
=
−5.0
V, I
C
= 0
V
CE
=
−2.0
V, I
C
=
−1.5
A
V
CE
=
−2.0
V, I
C
=
−3.0
A
V
CE
=
−2.0
V, I
C
=
−8.0
A
I
C
=
−8.0
A, I
B
=
−0.4
A
I
C
=
−12
A, I
B
=
−0.6
A
I
C
=
−8.0
A, I
B
=
−0.4
A
I
C
=
−12
A, I
B
=
−0.6
A
V
CB
=
−10
V, I
E
= 0, f = 1.0 MHz
V
CE
=
−10
V, I
C
=
−1.5
A
I
C
=
−8.0
A, R
L
= 6.3
Ω,
I
B1
=
−I
B2
=
−0.4
A, V
CC
≅ −50
V
Refer to the test circuit.
Collector cutoff current
Collector cutoff current
Collector cutoff current
Collector cutoff current
I
CBO
I
CER
I
CEX1
I
CEX2
µ
A
mA
µ
A
mA
Emitter cutoff current
DC current gain
DC current gain
DC current gain
Collector saturation voltage
Collector saturation voltage
Base saturation voltage
Base saturation voltage
Collector capacitance
Gain bandwidth product
Turn-on time
Storage time
Fall time
I
EBO
h
FE1
*
h
FE2
*
h
FE3
*
V
CE(sat)1
*
V
CE(sat)2
*
V
BE(sat)1
*
V
BE(sat)2
*
C
ob
f
T
t
on
t
stg
t
f
µ
A
µ
s
µ
s
µ
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