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2SK3056-Z

Description
32A, 60V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, MP-25Z, TO-220SMD, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size238KB,10 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

2SK3056-Z Overview

32A, 60V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, MP-25Z, TO-220SMD, 3 PIN

2SK3056-Z Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-220
package instructionMP-25Z, TO-220SMD, 3 PIN
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)25.6 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)32 A
Maximum drain current (ID)32 A
Maximum drain-source on-resistance0.05 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)34 W
Maximum pulsed drain current (IDM)100 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas
Electronics Corporation
took over all the business of both
companies.
Therefore, although the old company name remains in this document, it is a valid
Renesas
Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1
st
, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation
(http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.

2SK3056-Z Related Products

2SK3056-Z 2SK3056-Z-AZ 2SK3056-Z-E1-AZ 2SK3056-S 2SK3056-AZ 2SK3056-Z-E2-AZ 2SK3056-ZJ-AZ 2SK3056-ZJ-E1-AZ 2SK3056-ZJ 2SK3056
Description 32A, 60V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, MP-25Z, TO-220SMD, 3 PIN 2SK3056-Z-AZ 2SK3056-Z-E1-AZ 32A, 60V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, MP-25 FIN CUT, 3 PIN 2SK3056-AZ 2SK3056-Z-E2-AZ 2SK3056-ZJ-AZ 2SK3056-ZJ-E1-AZ 32A, 60V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZJ, 3 PIN 32A, 60V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, MP-25, 3 PIN
package instruction MP-25Z, TO-220SMD, 3 PIN SMALL OUTLINE, R-PSSO-G2 , IN-LINE, R-PSIP-T3 FLANGE MOUNT, R-PSFM-T3 , , , SMALL OUTLINE, R-PSSO-G2 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknow compli compli unknow compli unknow unknow unknow unknow unknow
Base Number Matches 1 1 1 1 1 1 1 1 1 1
Parts packaging code TO-220 MP-25Z MP-25Z TO-262AA MP-25 - - - D2PAK TO-220AB
Contacts 3 3 3 3 3 - - - 3 3
ECCN code EAR99 EAR99 - EAR99 EAR99 - - - EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 25.6 mJ 25.6 mJ - 25.6 mJ 25.6 mJ - - - 25.6 mJ 25.6 mJ
Shell connection DRAIN DRAIN - DRAIN DRAIN - - - DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE - - - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V 60 V - 60 V 60 V - - - 60 V 60 V
Maximum drain current (Abs) (ID) 32 A 32 A - 32 A 32 A - - - 32 A 32 A
Maximum drain current (ID) 32 A 32 A - 32 A 32 A - - - 32 A 32 A
Maximum drain-source on-resistance 0.05 Ω 0.05 Ω - 0.05 Ω 0.05 Ω - - - 0.05 Ω 0.05 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR - - - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 R-PSSO-G2 - R-PSIP-T3 R-PSFM-T3 - - - R-PSSO-G2 R-PSFM-T3
Number of components 1 1 - 1 1 - - - 1 1
Number of terminals 2 2 - 3 3 - - - 2 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE - - - ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C - 150 °C 150 °C - - - 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY - - - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR - - - RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE - IN-LINE FLANGE MOUNT - - - SMALL OUTLINE FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL - N-CHANNEL N-CHANNEL - - - N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 34 W 34 W - 34 W 34 W - - - 34 W 34 W
Maximum pulsed drain current (IDM) 100 A 100 A - 100 A 100 A - - - 100 A 100 A
Certification status Not Qualified Not Qualified - Not Qualified Not Qualified - - - Not Qualified Not Qualified
surface mount YES YES - NO NO - - - YES NO
Terminal form GULL WING GULL WING - THROUGH-HOLE THROUGH-HOLE - - - GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE - SINGLE SINGLE - - - SINGLE SINGLE
transistor applications SWITCHING SWITCHING - SWITCHING SWITCHING - - - SWITCHING SWITCHING
Transistor component materials SILICON SILICON - SILICON SILICON - - - SILICON SILICON

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