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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3112
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3112 is N-channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
and designed for high voltage applications such as DC/DC
converter, actuator driver.
ORDERING INFORMATION
PART NUMBER
2SK3112
2SK3112-S
2SK3112-ZJ
PACKAGE
TO-220AB
TO-262
TO-263(MP-25ZJ)
FEATURES
•
Gate voltage rating ±30 V
•
Low on-state resistance
R
DS(on)
= 110 mΩ MAX. (V
GS
= 10 V, I
D
= 13 A)
•
Low input capacitance
C
iss
= 1600 pF TYP. (V
DS
= 10 V, V
GS
= 0 V)
•
Avalanche capability rated
•
Built-in gate protection diode
•
Surface mount device available
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
200
±30
±25
±75
100
1.5
150
−55
to +150
25
250
V
V
A
A
W
W
°C
°C
A
mJ
(TO-263)
(TO-262)
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 100 V, R
G
= 25
Ω,
V
GS
= 20 V→0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13335EJ1V0DS00 (1st edition)
Date Published May 2001 NS CP (K)
Printed in Japan
©
1998,2001
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