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BAW101S

Description
0.25 A, 300 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size88KB,4 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric View All

BAW101S Overview

0.25 A, 300 V, 2 ELEMENT, SILICON, SIGNAL DIODE

BAW101S Parametric

Parameter NameAttribute value
Number of terminals6
Number of components2
Processing package descriptionGREEN, PLASTIC PACKAGE-6
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structureSEPARATE, 2 ELEMENTS
Diode component materialssilicon
Maximum power consumption limit0.3000 W
Diode typeSignal diode
Maximum reverse recovery time0.0500 us
Maximum repetitive peak reverse voltage300 V
Maximum average forward current0.2500 A
BAW101S
HIGH VOLTAGE DUAL SWITCHING DIODE
Features
Fast Switching Speed: max. 50ns
High Reverse Breakdown Voltage: 300V
Two Electrically Isolated Elements in a Single Compact Package
Low Leakage Current: 150nA at Room Temperature
Lead, Halogen and Antimony Free, RoHS Compliant (Note 3)
"Green" Device (Note 4)
Mechanical Data
Case: SOT-363
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 2
Ordering Information: See Page 2
Weight: 0.006 grams (approximate)
NEW PRODUCT
6
5
4
1
2
3
Top View
Device Schematic
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
Single Diode
Series Connection
Single Diode
Series Connection
V
RRM
V
RWM
V
R
V
R(RMS)
I
F
I
FSM
I
FRM
Value
300
600
300
600
212
250
140
4.5
625
Unit
V
V
V
mA
A
mA
Characteristic
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Current (Note 2)
Single Diode Loaded
Double Diode Loaded
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs
Repetitive Peak Forward Current @ t = 8.3ms (Note 2)
Thermal Characteristics
Characteristic
Power Dissipation (Note 2)
Thermal Resistance Junction to Ambient Air (Note 2)
Operating and Storage Temperature Range
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
300
417
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage (Note 1)
Forward Voltage
Reverse Current (Note 1)
Total Capacitance
Reverse Recovery Time
Notes:
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)R
V
F
I
R
C
T
t
rr
Min
300
Max
1.1
50
150
75
2.0
50
Unit
V
V
nA
nA
μA
pF
ns
Test Condition
I
R
= 100μA
I
F
= 100mA
V
R
= 5V
V
R
= 250V
V
R
= 250V, T
J
= 150°C
V
R
= 0, f = 1.0MHz
I
F
= I
R
= 30mA,
I
rr
= 0.1 x I
R
, R
L
= 100Ω
1. Short duration pulse test used to minimize self-heating effect.
2. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. No purposefully added lead. Halogen and Antimony Free.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
BAW101S
Document number: DS32177 Rev. 4 - 2
1 of 4
www.diodes.com
July 2010
© Diodes Incorporated

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