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“Standard”:
2.
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DATA SHEET
N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR
2SK1285
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK1285 is N-channel MOS Field Effect Transistor designed for
solenoid, motor and lamp driver.
PACKAGE DRAWING
(Unit: mm)
8.5 MAX.
3.2 ±0.2
2.8 MAX.
FEATURES
•
Low on-state resistance
R
DS(on)
= 0.32
Ω
MAX. (V
GS
= 10 V, I
D
= 2 A)
R
DS(on)
= 0.40
Ω
MAX. (V
GS
= 4 V, I
D
= 2 A)
•
Low C
iss
C
iss
= 500 pF TYP.
•
Built-in G-S gate protection diodes
3.8 ±0.2
2.5 ±0.2
12 TYP.
QUALITY GRADE
Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Electronics Corporation to
know the specification of quality grade on the devices and its
recommended applications.
13.0 MIN.
12.0 MAX.
0.55
+0.08
–0.05
0.8
+0.08
–0.05
1.2 TYP.
2.3 TYP.
2.3 TYP.
ABSOLUTE MAXIMUM RATINGS
Maximum Temperatures
Storage Temperature
−55
to +150
Channel Temperature
150
Maximum Power Dissipation
1.3
Total Power Dissipation (T
A
= 25°C)
20
Total Power Dissipation (T
C
= 25°C)
Maximum Voltages and Currents (T
A
= 25°C)
Drain to Source Voltage
100
V
DSS
Gate to Source Voltage
±20
V
GSS(AC)
I
D(DC)
Drain Current (DC)
±3.0
Note
I
D(pulse)
Drain Current (pulse)
±12
Note
PW
≤
10
µ
s, Duty Cycle
≤
1%
°C
°C
MAX.
W
W
V
V
A
A
Gate
1. Source
2. Drain
3. Gate
4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Protection
Diode
Source
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17113EJ2V0DS00 (2nd edition)
(Previous No. TC-2384)
Date Published March 2004 N CP(K)
Printed in Japan
The mark
shows major revised points.
c
1993
Robotics Development
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