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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3058
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
2SK3058
2SK3058-S
2SK3058-ZJ
5
Note
2SK3058-Z
PACKAGE
TO-220AB
TO-262
TO-263
TO-220SMD
Note
FEATURES
•
Super Low On-State Resistance
R
DS(on)1
= 17 mΩ MAX. (V
GS
= 10 V, I
D
= 28 A)
R
DS(on)2
= 27 mΩ MAX. (V
GS
= 4.0 V, I
D
= 28 A)
•
Low C
iss
: C
iss
= 2100 pF (TYP.)
•
Built-in Gate Protection Diode
TO-220SND package is produced only in
Japan.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C)
Drain to Source Voltage (V
GS
= 0)
Gate to Source Voltage (V
DS
= 0)
Gate to Source Voltage (V
DS
= 0)
Drain Current (DC)
Drain Current (Pulse)
Note1
(TO-220AB)
60
±20
+20, –10
±55
±165
58
1.5
150
–55 to + 150
27.5
75.6
V
V
V
A
A
W
W
°C
°C
A
mJ
(TO-262)
V
DSS
V
GSS(AC)
V
GSS(DC)
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
≤
10
µ
s, Duty cycle
≤
1 %
2.
Starting Tch = 25 °C, V
DD
= 30 V, R
G
= 25
Ω,
V
GS
= 20 V
→
0
(TO-263, TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D13097EJ2V0DS00 (2nd edition)
Date Published April 2001 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
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1998, 1999
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