BC856BR datasheet, PDF - EEWORLD Datasheet

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BC856BR: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size325KB，2 Pages; ManufacturerCentral Semiconductor

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BC856BR Overview

Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3

BC856BR Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
package instruction	PLASTIC PACKAGE-3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	65 V
Configuration	SINGLE
Minimum DC current gain (hFE)	220
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.35 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz

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BC856 SERIES

BC857 SERIES

BC858 SERIES

SURFACE MOUNT

PNP SILICON TRANSISTOR

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BC856, BC857

and BC858 Series types are PNP Silicon Transistors

manufactured by the epitaxial planar process, epoxy

molded in a surface mount package, designed for

general purpose switching and amplifier applications.

MARKING CODE: SEE MARKING CODE TABLE

ON FOLLOWING PAGE

SOT-23 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Peak Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL

SYMBOL

ICBO

IEBO

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(ON)

fT

NF

Note: Reverse Lead Codes Available, Add “R” to the end of

the Part # and Marking Code.

SYMBOL

VCBO

VCEO

VEBO

IC

ICM

IBM

PD

TJ, Tstg

Θ

JA

BC858

30

BC857

BC856

50

80

45

65

5.0

100

200

350

-65 to +150

357

MAX

15

4.0

100

UNITS

V

mA

mW

°C

°C/W

UNITS

nA

μA

nA

V

MHz

dB

BC857C

BC858C

MIN MAX

420

800

CHARACTERISTICS:

(TA=25°C unless

TEST CONDITIONS

VCB=30V

VCB=30V, TA=150°C

VEB=5.0V

IC=10μA (BC858)

IC=10μA (BC857)

IC=10μA (BC856)

IC=10mA (BC858)

IC=10mA (BC857)

IC=10mA (BC856)

IE=10μA

IC=10mA, IB=0.5mA

IC=100mA, IB=5.0mA

IC=2.0mA, VCE=5.0V

IC=10mA, VCE=5.0V

VCE=5.0V, IC=10mA, f=100MHz

VCE=5.0V, IC=200μA,

RS=2.0KΩ, f=1.0KHz, BW=200Hz

otherwise noted)

MIN

30

50

80

30

45

65

5.0

0.30

0.65

0.75

0.82

0.6

100

10

BC856A

BC857A

BC858A

MIN MAX

125 250

BC856B

BC857B

BC858B

MIN MAX

220 475

hFE

VCE=5.0V, IC=2.0mA

R2 (20-November 2009)

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