BC856 thru BC859
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistors (PNP)
Mounting Pad Layout
0.031 (0.8)
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
.016 (0.4)
3
.056 (1.43
)
.052 (1.33
)
0.035 (0.9)
0.079 (2.0)
Top View
Pin Configuration
1
= Base,
2
= Emitter,
3
= Collector
0.037 (0.95)
0.037 (0.95)
Type
Dimensions in inches
and (millimeters)
Marking
3A
3B
3E
3F
3G
Type
BC858A
B
C
BC859A
B
C
Marking
3J
3K
3L
4A
4B
4C
1
2
max. .004 (0.1)
BC856A
B
BC857A
B
C
.007 (0.175)
.005 (0.125)
.037(0.95) .037(0.95)
.045 (1.15)
.037 (0.95)
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
Features
• PNP Silicon Epitaxial Planar Transistors for switching
and AF amplifier applications.
• Especially suited for automatic insertion in thick and
thin-film circuits.
• These transistors are subdivided into three groups
(A, B, and C) according to their current gain. The type
BC856 is available in groups A and B, however, the types
BC857, BC558 and BC859 can be supplied in all three
groups. The BC849 is a low noise type.
• As complementary types, the NPN transistors
BC846...BC849 are recomended.
(T
A
= 25°C unless otherwise noted)
Mechanical Data
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008g
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
Maximum Ratings and Thermal Characteristics
Parameter
Collector-Base Voltage
BC856
BC857
BC858, BC859
BC856
BC857
BC858, BC859
BC856
BC857
BC858, BC859
Symbol
–V
CBO
Value
80
50
30
80
50
30
65
45
30
5
100
200
200
200
310
(1)
Unit
V
Collector-Emitter Voltage (Base shorted)
–V
CES
V
Collector-Emitter Voltage (Base open)
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Base Current
Peak Emitter Current
Power Dissipation at T
SB
= 50°C
Thermal Resistance Junction to Ambient Air
–V
CEO
–V
EBO
–I
C
–I
CM
–I
BM
I
EM
P
tot
R
θJA
R
θSB
T
j
T
S
V
V
mA
mA
mA
mA
mW
°C/W
°C/W
°C
°C
450
(1)
320
(1)
150
–65 to +150
Thermal Resistance Junction to Substrate Backside
Junction Temperature
Storage Temperature Range
Note:
(1) Device on fiberglass substrate, see layout on third page.
Document Number 88169
09-May-02
www.vishay.com
1
BC856 thru BC859
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
(T
Parameter
Current Gain
Current Gain Group A
B
C
Current Gain Group A
B
C
Current Gain Group A
B
C
Current Gain Group A
B
C
Current Gain Group A
B
C
Current Gain Group A
B
C
Collector Saturation Voltage
Base Saturation Voltage
Base-Emitter Voltage–V
BEon
Collector-Base Cutoff Current
Gain-Bandwidth Product
Collector-Base Capacitance
Noise Figure
BC856, BC857, BC858
BC859
J
= 25°C unless otherwise noted)
Symbol
h
fe
Test Condition
–V
CE
= 5V, –I
C
= 2mA
f = 1kHz
–V
CE
= 5V, –I
C
= 2mA
f = 1kHz
–V
CE
= 5V, –I
C
= 2mA
f = 1kHz
–V
CE
= 5V, –I
C
= 2mA
f = 1kHz
–V
CE
= 5V, –I
C
= 10µA
Min
—
—
—
1.6
3.2
6.0
—
—
—
—
—
—
—
—
—
110
200
420
—
—
—
—
660
—
—
—
—
—
—
—
—
Typ
220
330
600
2.7
4.5
8.7
18
30
60
1.5
⋅
10
–4
2
⋅
10
–4
3
⋅
10
–4
90
150
270
180
290
520
90
250
700
900
750
—
—
—
150
—
2
1
1.2
Max
—
—
—
4.5
8.5
15.0
30
60
110
—
—
—
—
—
—
220
450
800
300
650
—
—
mV
820
15
5
—
6
10
4
Unit
—
—
—
kΩ
Input Impedance
h
ie
Output Admittance
h
oe
µS
—
—
—
—
—
—
—
—
—
mV
mV
Reverse Voltage
Transfer Ratio
DC Current Gain
h
re
h
FE
h
FE
–V
CE
= 5 V, –I
C
= 2mA
–V
CEsat
–V
BEsat
–I
C
= 10 mA, –I
B
= 0.5mA
–I
C
= 100 mA, –I
B
= 5mA
–I
C
= 10 mA, –I
B
= 0.5mA
–I
C
= 100 mA, –I
B
= 5mA
–V
CE
= 5 V, –I
C
= 2mA
600
–V
CE
= 5 V, –I
C
= 10mA
–I
CBO
f
T
C
CBO
–V
CB
= 30V
–V
CB
= 30V, T
J
= 150˚C
–V
CE
= 5V, –I
C
= 10mA
f = 100MHz
–V
CB
= 10V, f = 1MHz
–V
CE
= 5V, –I
C
= 200µA
R
G
=2kΩ,f=1kHz,
∆f=
200Hz
F
BC859
–V
CE
= 5V, –I
C
= 200µA
R
G
= 2kΩ, f = 30...15000Hz
nA
µA
MHz
pF
dB
4
Note:
(1) Device on fiberglass substrate, see layout on next page
www.vishay.com
2
Document Number 88169
09-May-02
BC856 thru BC859
Vishay Semiconductors
formerly General Semiconductor
0.30 (7.5)
0.12 (3)
Layout for R
θJA
test
Thickness: Fiberglass 0.059 in. (1.5 mm)
Copper leads 0.012 in. (0.3 mm)
0.59 (15)
0.47 (12)
0.03 (0.8)
.04 (1)
.08 (2)
.04 (1)
.08 (2)
Dimensions in inches (millimeters)
0.2 (5)
Admissible power dissipation
versus temperature of substrate backside
Device on fiblerglass substrate, see layout
0.06 (1.5)
0.20 (5.1)
Pulse thermal resistance
versus pulse duration (normalized)
Device on fiblerglass substrate, see layout
DC current gain versus collector current
Collector–Base cutoff current versus
ambient temperature
Document Number 88169
09-May-02
www.vishay.com
3
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