BC857CRTR datasheet, PDF - EEWORLD Datasheet

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BC857CRTR: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size117KB，2 Pages; ManufacturerCentral Semiconductor

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BC857CRTR Overview

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3

BC857CRTR Parametric

Parameter Name	Attribute value
Maker	Central Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	420
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.35 W
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz

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BC856 SERIES

BC857 SERIES

BC858 SERIES

SURFACE MOUNT

PNP SILICON TRANSISTOR

Central

TM

Semiconductor Corp.

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BC856,

BC857 and BC858 Series types are PNP Silicon

Transistors manufactured by the epitaxial planar

process, epoxy molded in a surface mount

package, designed for general purpose switching

and amplifier applications.

MARKING CODE: PLEASE SEE MARKING

CODE TABLE ON FOLLOWING PAGE

SOT-23 CASE

MAXIMUM RATINGS

(TA=25°C)

SYMBOL

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCEO

Emitter-Base Voltage

VEBO

Collector Current

IC

Peak Collector Current

ICM

Peak Base Current

IBM

Power Dissipation

PD

Operating and Storage

Junction Temperature

TJ,Tstg

Thermal Resistance

Θ

JA

BC858

30

Note: Reverse Lead Codes Available, Add “R” to

the end of the Part # and Marking Code.

BC857

50

45

5.0

100

200

350

-65 to +150

357

BC856

80

65

UNITS

V

mA

mW

°C

°C/W

ELECTRICAL CHARACTERISTICS

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

ICBO

VCB= 30V

ICBO

VCB= 30V, TA=150°C

IEBO

VEB=5.0V

BVCBO

IC=10µA (BC858)

30

BVCBO

IC=10µA (BC857)

50

BVCBO

IC=10µA (BC856)

80

BVCEO

IC=10mA (BC858)

30

BVCEO

IC=10mA (BC857)

45

BVCEO

IC=10mA (BC856)

65

BVEBO

IE=10µA

5.0

VCE(SAT)

IC=10mA, IB=0.5mA

VCE(SAT)

IC=100mA, IB=5.0mA

VBE(ON)

IC=2.0mA, VCE=5.0V

0.6

VBE(ON)

IC=10mA, VCE=5.0V

fT

VCE=5.0V, IC=10mA, f=100MHz

100

NF

VCE=5.0V, IC=200µA,

RS=2KΩ, f= 1KHz, BW=200Hz

BC856A

BC857A

BC858A

MIN

MAX

125

250

TYP

MAX

15

4.0

100

0.3

0.65

0.75

0.82

UNITS

nA

µA

nA

V

MHz

dB

10

BC856B

BC857B

BC858B

MIN

MAX

220

475

hFE

VCE=5.0V, IC=2.0mA

BC857C

BC858C

MIN

MAX

420

800

R1 (10-September 2004)

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