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BC858CRBK

Description
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size117KB,2 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric View All

BC858CRBK Overview

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3

BC858CRBK Parametric

Parameter NameAttribute value
MakerCentral Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)420
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power dissipation(Abs)0.35 W
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
BC856 SERIES
BC857 SERIES
BC858 SERIES
SURFACE MOUNT
PNP SILICON TRANSISTOR
Central
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BC856,
BC857 and BC858 Series types are PNP Silicon
Transistors manufactured by the epitaxial planar
process, epoxy molded in a surface mount
package, designed for general purpose switching
and amplifier applications.
MARKING CODE: PLEASE SEE MARKING
CODE TABLE ON FOLLOWING PAGE
SOT-23 CASE
MAXIMUM RATINGS
(TA=25°C)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
IC
Peak Collector Current
ICM
Peak Base Current
IBM
Power Dissipation
PD
Operating and Storage
Junction Temperature
TJ,Tstg
Thermal Resistance
Θ
JA
BC858
30
30
Note: Reverse Lead Codes Available, Add “R” to
the end of the Part # and Marking Code.
BC857
50
45
5.0
100
200
200
350
-65 to +150
357
BC856
80
65
UNITS
V
V
V
mA
mA
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB= 30V
ICBO
VCB= 30V, TA=150°C
IEBO
VEB=5.0V
BVCBO
IC=10µA (BC858)
30
BVCBO
IC=10µA (BC857)
50
BVCBO
IC=10µA (BC856)
80
BVCEO
IC=10mA (BC858)
30
BVCEO
IC=10mA (BC857)
45
BVCEO
IC=10mA (BC856)
65
BVEBO
IE=10µA
5.0
VCE(SAT)
IC=10mA, IB=0.5mA
VCE(SAT)
IC=100mA, IB=5.0mA
VBE(ON)
IC=2.0mA, VCE=5.0V
0.6
VBE(ON)
IC=10mA, VCE=5.0V
fT
VCE=5.0V, IC=10mA, f=100MHz
100
NF
VCE=5.0V, IC=200µA,
RS=2KΩ, f= 1KHz, BW=200Hz
BC856A
BC857A
BC858A
MIN
MAX
125
250
TYP
MAX
15
4.0
100
0.3
0.65
0.75
0.82
UNITS
nA
µA
nA
V
V
V
V
V
V
V
V
V
V
V
MHz
dB
10
BC856B
BC857B
BC858B
MIN
MAX
220
475
hFE
VCE=5.0V, IC=2.0mA
BC857C
BC858C
MIN
MAX
420
800
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