DATA SHEET
SILICON POWER TRANSISTOR
2SA1648, 2SA1648-Z
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SA1648 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
saturation voltage.
This transistor is ideal for use in switching regulators, DC/DC
converters, motor drivers, solenoid drivers, and other low-voltage
power supply devices, as well as for high-current switching.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• Available for high-current control in small dimension
• Z type is a lead processed product and is deal for mounting a
hybrid IC.
• Mold package that does not require an insulating board or
insulation bushing
• Low collector saturation voltage:
V
CE(sat)
=
−0.3
V MAX. (@I
C
=
−3
A)
• Fast switching speed:
t
f
= 0.3
µ
s MAX. (@I
C
=
−3
A)
• High DC current gain and excellent linearity
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T
(Tc = 25
°C)
P
T
(Ta = 25
°C)
T
j
T
stg
Ratings
−100
−60
−7.0
−5.0
−10
−2.5
18
1.0**, 2.0***
150
−55
to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
Electrode Connection
1. Base
2. Collector
3. Emitter
*:
PW
≤
300
µ
s, duty cycle
≤
10%
**: Printing board mounted
2
***: 7.5 mm
×
0.7 mm ceramic board mounted
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16121EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
2SA1648, 2SA1648-Z
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
°
Parameter
Collector to emitter voltage
Collector to emitter voltage
Collector cutoff current
Collector cutoff current
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
DC current gain
Collector saturation voltage
Collector saturation voltage
Base saturation voltage
Base saturation voltage
Collector capacitance
Gain bandwidth product
Turn-on time
Storage time
Fall time
Symbol
V
CEO(SUS)
V
CEX(SUS)
I
CBO
I
CER
I
CEX1
I
CEX2
I
EBO
h
FE1
*
h
FE2
*
h
FE3
*
V
CE(sat)1
*
V
CE(sat)2
*
V
BE(sat)1
*
V
BE(sat)2
*
C
ob
f
T
t
on
t
stg
t
f
Conditions
I
C
=
−3.0
A, I
B
=
−0.3
A, L = 1 mH
I
C
=
−3.0
A, I
B2
=
−I
B1
=
−0.3
A,
V
BE(OFF)
= 1.5 V, L = 180
µ
H, clamped
V
CE
=
−60
V, I
E
= 0
V
CE
=
−60
V, R
BE
= 50
Ω,
Ta = 125
°C
V
CE
=
−60
V, V
BE(OFF)
= 1.5 V
V
CE
=
−60
V, V
BE(OFF)
= 1.5 V,
Ta = 125
°C
V
EB
=
−5.0
V, I
C
= 0
V
CE
=
−2.0
V, I
C
=
−0.5
A
V
CE
=
−2.0
V, I
C
=
−1.0
A
V
CE
=
−2.0
V, I
C
=
−3.0
A
I
C
=
−3.0
A, I
B
=
−0.15
A
I
C
=
−4.0
A, I
B
=
−0.2
A
I
C
=
−3.0
A, I
B
=
−0.15
A
I
C
=
−4.0
A, I
B
=
−0.2
A
V
CB
=
−10
V, I
E
= 0, f = 1.0 MHz
V
CE
=
−10
V, I
C
= 0.5 A
I
C
=
−3.0
A, R
L
= 17
Ω,
I
B1
=
−I
B2
=
−0.15
A, V
CC
≅ −50
V
Refer to the test circuit.
80
90
0.3
1.5
0.3
100
100
60
−0.3
−0.5
−1.2
−1.5
V
V
V
V
pF
MHz
200
400
MIN.
−60
−60
−10
−1.0
−10
−1.0
−10
TYP.
MAX.
Unit
V
V
µ
A
mA
µ
A
mA
µ
A
µ
s
µ
s
µ
s
* Pulse test PW
≤
350
µ
s, duty cycle
≤
2%/Pulsed
h
FE
CLASSIFICATION
Marking
h
FE2
M
100 to 200
L
150 to 300
K
200 to 400
SWITCHING TIME TEST CIRCUIT
Base current
waveform
Collector current
waveform
2
Data Sheet D16121EJ1V0DS
2SA1648, 2SA1648-Z
TYPICAL CHARACTERISTICS (Ta = 25°C)
°
Total Power Dissipation P
T
(W)
Case Temperature T
C
(°C)
I
C
Derating dT (%)
Case Temperature T
C
(°C)
Transient Thermal Resistance r
th(j−c)
(°C/W)
Single pulse
Single pulse
Collector Current I
C
(A)
Collector to Emitter Voltage V
CE
(V)
Pulse Width PW (s)
Pulse test
Collector Current I
C
(A)
DC Current Gain h
FE
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(A)
Data Sheet D16121EJ1V0DS
3
4
StorageTime t
stg
(
µ
s)
Fall Time t
f
(
µ
s)
Collector Capacitance C
ob
(pF)
Base Saturation Voltage V
BE(sat)
(V)
Collector Saturation Voltage V
CE(sat)
(V)
Collector Current I
C
(A)
Collector to Base Voltage V
CB
(V)
Pulse test
Collector Current I
C
(A)
Collector Current I
C
(A)
Data Sheet D16121EJ1V0DS
Gain Bandwidth Product f
T
(MHz)
Collector Current I
C
(A)
Collector to Emitter Voltage V
CE
(V)
2SA1648, 2SA1648-Z
Microchip MCU
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