DSS5220V
LOW V
CE(SAT)
PNP SURFACE MOUNT TRANSISTOR
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Features
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Epitaxial Planar Die Construction
Complementary PNP Type Available (DSS4220V)
Low Collector-Emitter Saturation Voltage, V
CE(SAT)
High Current Gain (h
FE
) at High I
C
Surface Mount Package Suited for Automated Assembly
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 1)
"Green Device" (Note 2)
Mechanical Data
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Case: SOT-563
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish
⎯
Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.003 grams (approximate)
NEW PRODUCT
1, 2, 5, 6
6
5
4
3
4
Top View
Bottom View
Device Schematic
1
2
3
Pin Out Configuration
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
Value
-20
-20
-5
-2
-4
-0.3
-0.6
Unit
V
V
V
A
A
A
A
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Base Current (DC)
Peak Base Current
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ T
A
= 25°C
Thermal Resistance, Junction to Ambient (Note 3) @ T
A
= 25°C
Operating and Storage Temperature Range
Notes:
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
600
208
-55 to +150
Unit
mW
°C/W
°C
1. No purposefully added lead.
2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
DSS5220V
Document number: DS31660 Rev. 2 - 2
1 of 5
www.diodes.com
March 2009
© Diodes Incorporated
DSS5220V
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CES
I
EBO
Min
-20
-20
-5
⎯
⎯
⎯
220
220
220
155
60
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
150
⎯
⎯
⎯
⎯
⎯
⎯
Typ
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
60
20
40
167
140
27
Max
⎯
⎯
⎯
-100
-50
-100
-100
⎯
⎯
⎯
⎯
⎯
-80
-115
-220
-210
-455
-390
210
-1.1
-1.1
-1
20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
V
V
V
nA
μA
nA
nA
Test Condition
I
C
= -100μA, I
E
= 0
I
C
= -10mA, I
B
= 0
I
E
= -100μA, I
C
= 0
V
CB
= -20V, I
E
= 0
V
CB
= -20V, I
E
= 0, T
A
= 150°C
V
CE
= -20V, V
BE
= 0
V
EB
= -5V, I
C
= 0
V
CE
= -2V, I
C
= -1mA
V
CE
= -2V, I
C
= -100mA
V
CE
= -2V, I
C
= -500mA
V
CE
= -2V, I
C
= -1A
V
CE
= -2V, I
C
= -2A
I
C
= -100mA, I
B
= -1mA
I
C
= -500mA, I
B
= -50mA
I
C
= -1A, I
B
= -50mA
I
C
= -1A, I
B
= -100mA
I
C
= -2A, I
B
= -100mA
I
C
= -2A, I
B
= -200mA
I
C
= -1A, I
B
= -100mA
I
C
= -1A, I
B
= -50mA
I
C
= -1A, I
B
= -100mA
V
CE
= -5V, I
C
= -1A
V
CB
= -10V, f = 1.0MHz
V
CE
= -10V, I
C
= -50mA, f = 100MHz
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 4)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
NEW PRODUCT
DC Current Gain
h
FE
⎯
Collector-Emitter Saturation Voltage
V
CE(SAT)
mV
Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Notes:
R
CE(SAT)
V
BE(SAT)
V
BE(ON)
C
obo
f
T
t
on
t
d
t
r
t
off
t
s
t
f
mΩ
V
V
pF
MHz
ns
ns
ns
ns
ns
ns
V
CC
= -10V
I
C
= -1A, I
B1
= I
B2
= -50mA
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle
≤2%.
600
10
P
D
, POWER DISSIPATION (mW)
-I
C
, COLLECTOR CURRENT (A)
500
Pw = 10ms
Pw = 1ms
400
1
300
Pw = 100ms
200
0.1
DC
100
R
θJA
= 208°C/W
0
0
25
50
75
100
125
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs.
Ambient Temperature (Note 3)
150
0.01
0.1
1
10
100
-V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage (Note 3)
DSS5220V
Document number: DS31660 Rev. 2 - 2
2 of 5
www.diodes.com
March 2009
© Diodes Incorporated
DSS5220V
1,000
1
I
C
/I
B
= 10
800
h
FE
, DC CURRENT GAIN
T
A
= 150°C
V
CE
= -2V
-V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
T
A
= 85°C
0.1
T
A
= 150°C
T
A
= 85°C
T
A
= 25°C
600
T
A
= 25°C
400
NEW PRODUCT
0.01
T
A
= -55°C
200
T
A
= -55°C
0
1,000
10,000
10
100
-I
C
, COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain vs. Collector Current
1
-V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
1.2
V
CE
= -5V
0.001
0.1
1
10
100
1,000
10,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
-V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
1.2
I
C
/I
B
= 10
1.0
1.0
0.8
T
A
= -55°C
0.8
T
A
= -55°C
0.6
T
A
= 25°C
0.6
T
A
= 25°C
0.4
T
A
= 85°C
0.4
T
A
= 85°C
0.2
T
A
= 150°C
0.2
T
A
= 150°C
0
1
10
100
1,000
10,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
f = 1MHz
0
0.1
1,000
1
10
100
10,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
1,000
CAPACITANCE (pF)
100
C
ibo
10
C
obo
1
0.1
1
10
100
V
R
, REVERSE VOLTAGE (V)
Fig. 7 Typical Capacitance Characteristics
DSS5220V
Document number: DS31660 Rev. 2 - 2
3 of 5
www.diodes.com
March 2009
© Diodes Incorporated
DSS5220V
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.9
D = 0.02
R
θJA
(t) = r(t) * R
θ
JA
R
θ
JA
= 145°C/W
P(pk)
NEW PRODUCT
0.01
D = 0.01
D = 0.005
t
1
t
2
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/t
2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t
1
, PULSE DURATION TIME (s)
Fig. 8 Transient Thermal Response (Note 3)
100
1,000
10,000
Ordering Information
Part Number
DSS5220V-7
Notes:
(Note 5)
Case
SOT-563
Packaging
3000/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
ZP7 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
ZP7
YM
Date Code Key
Year
Code
Month
Code
2008
V
Jan
1
Feb
2
2009
W
Mar
3
2010
X
Apr
4
May
5
2011
Y
Jun
6
2012
Z
Jul
7
Aug
8
2013
A
Sep
9
2014
B
Oct
O
Nov
N
2015
C
Dec
D
Package Outline Dimensions
A
B
C
D
G
K
M
SOT-563
Dim Min
Max
Typ
A
0.15 0.30 0.20
B
1.10 1.25 1.20
C
1.55 1.70 1.60
D
-
-
0.50
G
0.90 1.10 1.00
H
1.50 1.70 1.60
K
0.55 0.60 0.60
L
0.10 0.30 0.20
M
0.10 0.18 0.11
All Dimensions in mm
H
L
DSS5220V
Document number: DS31660 Rev. 2 - 2
4 of 5
www.diodes.com
March 2009
© Diodes Incorporated
DSS5220V
Suggested Pad Layout
C2
C2
Z
G
C1
Y
NEW PRODUCT
Dimensions Value (in mm)
Z
2.2
G
1.2
X
0.375
Y
0.5
C1
1.7
C2
0.5
X
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DSS5220V
Document number: DS31660 Rev. 2 - 2
5 of 5
www.diodes.com
March 2009
© Diodes Incorporated
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