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DSS5240V

Description
1800 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size163KB,5 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric View All

DSS5240V Overview

1800 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR

DSS5240V Parametric

Parameter NameAttribute value
Number of terminals6
Transistor polarityPNP
Maximum collector current1.8 A
Maximum Collector-Emitter Voltage40 V
Processing package descriptionGREEN, ULTRA SMALL, PLASTIC PACKAGE-6
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formFLAT
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Number of components1
Transistor component materialsSILICON
Transistor typeGENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor50
Rated crossover frequency150 MHz
DSS5240V
LOW V
CE(SAT)
PNP SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary NPN Type Available (DSS4240V)
Low Collector-Emitter Saturation Voltage, V
CE(SAT)
Surface Mount Package Suited for Automated Assembly
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 1)
"Green Device" (Note 2)
Mechanical Data
Case: SOT-563
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish
Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.003 grams (approximate)
NEW PRODUCT
1, 2, 5, 6
3
4
Top View
Bottom View
Device Schematic
6
5
4
1
2
3
Pin Out Configuration
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CRP
I
CM
I
B
I
BM
Value
-40
-40
-5
-1.8
-2
-3
-300
-1
Unit
V
V
V
A
A
A
mA
A
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Repetitive Collector Current (Note 3)
Peak Pulse Collector Current
Base Current (DC)
Peak Base Current
Thermal Characteristics
Characteristic
Power Dissipation (Note 4) @ T
A
= 25°C
Thermal Resistance, Junction to Ambient (Note 4) @ T
A
= 25°C
Operating and Storage Temperature Range
Notes:
1.
2.
3.
4.
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
600
208
-55 to +150
Unit
mW
°C/W
°C
No purposefully added lead.
Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Operated under pulse conditions: duty cycle
20%, pulse width tp
30ms.
Device mounted on FR-4 PCB with minimum recommended pad layout.
DSS5240V
Document number: DS31673 Rev. 2 - 2
1 of 5
www.diodes.com
March 2009
© Diodes Incorporated
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