DSS5240Y
40V LOW V
CE(sat)
PNP SURFACE MOUNT TRANSISTOR
Features
•
•
•
•
•
•
Epitaxial Planar Die Construction
Ideal for Low Power Amplification and Switching
Ultra Small Surface Mount Package
“Lead Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free, "Green Device" (Note 2)
ESD rating: 400V-MM, 8KV-HBM
Mechanical Data
•
•
•
•
•
Case: SOT-363
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin annealed over Copper Plated Alloy
42 leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (approximate)
C
C
C
E
B
C
C
B
E
Top View
Device Symbol
Top View
Pin Out Configuration
Ordering Information
(Note 3)
Product
DSS5240Y-7
Notes:
Marking
ZP8
Reel size (inches)
7
Tape width (mm)
8mm
Quantity per reel
3,000
1. No purposefully added lead.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com
Marking Information
ZP8
ZP8 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2009
W
Jan
1
Feb
2
2010
X
Mar
3
2011
Y
Apr
4
May
5
YM
2012
Z
Jun
6
2013
A
Jul
7
Aug
8
2014
B
Sep
9
2015
C
Oct
O
Nov
N
2016
D
Dec
D
DSS5240Y
Document number: DS31683 Rev. 2 - 2
1 of 6
www.diodes.com
October 2010
© Diodes Incorporated
DSS5240Y
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Base Current (DC)
Peak Base Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
Value
-40
-40
-5
-2
-3
-300
-1
Unit
V
V
V
A
A
mA
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 4) @ T
A
= 25°C
Thermal Resistance, Junction to Ambient (Note 4) @ T
A
= 25°C
Operating and Storage Temperature Range
Notes:
4. Device mounted on FR-4 PCB, with minimum recommended pad layout.
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
625
200
-55 to +150
Unit
mW
°C/W
°C
0.8
10
Pw = 100µs
P
D
, POWER DISSIPATION (W)
I
C
, COLLECTOR CURRENT (A)
0.6
1
0.4
0.1
0.2
R
θJA
= 200
°
C/W
0.01
0
50
100
150
200
T
A
, AMBIENT TEMPERATURE (
°
C)
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 4)
0
0.001
0.1
1
10
100
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
Fig. 2 Safe Operating Area
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
D = 0.9
0.1
D = 0.1
D = 0.05
R
θJA
(t) = r(t) * R
θ
JA
R
θ
JA
= 177°C/W
P(pk)
D = 0.02
0.01
D = 0.01
D = 0.005
t
1
D = Single Pulse
t
2
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/t
2
0.001
0.0001
0.001
0.01
0.1
1
10
100
t
1
, PULSE DURATION TIME (s)
1,000
10,000
100,000
Fig. 3 Transient Thermal Response
DSS5240Y
Document number: DS31683 Rev. 2 - 2
2 of 6
www.diodes.com
October 2010
© Diodes Incorporated
DSS5240Y
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain (Note 5)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
Min
-40
-40
-5
⎯
⎯
300
260
210
100
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
100
⎯
⎯
⎯
⎯
⎯
⎯
Typ
⎯
⎯
⎯
⎯
⎯
450
380
325
210
⎯
⎯
⎯
⎯
⎯
⎯
-1.0
-0.67
25
220
73
27
46
237
195
42
Max
⎯
⎯
⎯
-100
-50
-100
⎯
⎯
⎯
⎯
-100
-110
-225
-225
-350
-220
-1.1
-0.75
40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
V
V
V
nA
μA
nA
⎯
Test Condition
I
C
= -100μA, I
E
= 0
I
C
= -10mA, I
B
= 0
I
E
= -100μA, I
C
= 0
V
CB
= -30V, I
E
= 0
V
CB
= -30V, I
E
= 0, T
A
= 150°C
V
EB
= -4V, I
C
= 0
V
CE
= -2V, I
C
= -100mA
V
CE
= -2V, I
C
= -500mA
V
CE
= -2V, I
C
= -1A
V
CE
= -2V, I
C
= -2A
I
C
= -100mA, I
B
= -1mA
I
C
= -500mA, I
B
= -50mA
I
C
= -750mA, I
B
= -15mA
I
C
= -1A, I
B
= -50mA
I
C
= -2A, I
B
= -200mA
I
C
= -500mA, I
B
= -50mA
I
C
= -2A, I
B
= -200mA
V
CE
= -2V, I
C
= -100mA
V
CB
= -10V, f = 1.0MHz
V
CE
= -10V, I
C
= -50mA, f = 100MHz
Collector-Emitter Saturation Voltage (Note 5)
V
CE(sat)
mV
Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage (Note 5)
Base-Emitter Turn On Voltage (Note 5)
Output Capacitance
Current Gain-Bandwidth Product
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Notes:
R
CE(sat)
V
BE(sat)
V
BE(on)
C
obo
f
T
t
on
t
d
t
r
t
off
t
s
t
f
mΩ
V
V
pF
MHz
ns
ns
ns
ns
ns
ns
V
CC
= -10V
I
C
= -1A, I
B1
= I
B2
= -50mA
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle
≤2%.
2.0
1,000
900
V
CE
= -2V
T
A
= 150°C
I
C
, COLLECTOR CURRENT (A)
1.6
I
B
= 5mA
800
h
FE
, DC CURRENT GAIN
700
600
500
400
300
200
100
I
B
= 4mA
T
A
= 125°C
T
A
= 85°C
1.2
I
B
= 3mA
0.8
I
B
= 2mA
T
A
= 25°C
0.4
I
B
= 1mA
T
A
= -55°C
0
0
2
4
6
8
10
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
0
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
Fig. 5 Typical DC Current Gain vs. Collector Current
DSS5240Y
Document number: DS31683 Rev. 2 - 2
3 of 6
www.diodes.com
October 2010
© Diodes Incorporated
DSS5240Y
1
I
C
/I
B
= 10
1
I
C
/I
B
= 20
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.1
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.1
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
0.01
T
A
= -55°C
T
A
= 25°C
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
0.001
0.0001
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
Fig. 7 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
1.2
1.0
1.2
1.0
I
C
/I
B
= 10
I
C
/I
B
= 20
0.8
T
A
= -55°C
0.8
T
A
= -55°C
0.6
T
A
= 25°C
T
A
= 85°C
T
A
= 125°C
0.6
T
A
= 25°C
0.4
T
A
= 150°C
0.4
T
A
= 125°C
T
A
= 85°C
0.2
0
0.0001
0.2
0
0.0001
T
A
= 150°C
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
Fig. 8 Typical Base-Emitter Saturation Voltage
vs. Collector Current
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
Fig. 9 Typical Base-Emitter Saturation Voltage
vs. Collector Current
V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
1.2
V
CE
= 5V
1.0
0.8
T
A
= -55°C
0.6
T
A
= 25°C
0.4
T
A
= 85°C
T
A
= 125°C
0.2
T
A
= 150°C
0
0.0001
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
Fig. 10 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
DSS5240Y
Document number: DS31683 Rev. 2 - 2
4 of 6
www.diodes.com
October 2010
© Diodes Incorporated
DSS5240Y
Package Outline Dimensions
A
B C
H
K
M
J
D
F
L
SOT-363
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Typ
F
0.40
0.45
H
1.80
2.20
J
0
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.22
0°
8°
α
All Dimensions in mm
Suggested Pad Layout
C2
C2
Z
G
C1
Dimensions Value (in mm)
Z
2.5
G
1.3
X
0.42
Y
0.6
C1
1.9
C2
0.65
Y
X
DSS5240Y
Document number: DS31683 Rev. 2 - 2
5 of 6
www.diodes.com
October 2010
© Diodes Incorporated
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