Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
・With
TO-220C package
・DARLINGTON
・High
DC current gain
・Low
collector saturation voltage
APPLICATIONS
・For
low-frequency power amplifier and
low-speed switching applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2SB601
Absolute maximum ratings(Tc=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
固电
IN
导½
半
PARAMETER
CONDITIONS
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current-DC
ANG
CH
MIC
E SE
Open emitter
Open base
Open collector
OR
UCT
ND
O
VALUE
-100
-100
-7
-5
-8
-0.5
UNIT
V
V
V
A
A
A
Collector current-Pulse
Base current-DC
T
C
=25℃
30
W
1.5
150
-55~150
℃
℃
P
T
Total power dissipation
T
a
=25℃
T
j
T
stg
Junction temperature
Storage temperature
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
CEX
I
EBO
h
FE-1
h
FE-2
C
ob
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=-3A, I
B1
=-3mA,L=1mH
I
C
=-3A ,I
B
=-3mA
I
C
=-3A ,I
B
=-3mA
V
CB
=-100V, I
E
=0
V
CE
=-100V, V
BE
=-1.5V
T
a
=25℃
V
EB
=-5V; I
C
=0
I
C
=-3A ; V
CE
=-2V
I
C
=-5A ; V
CE
=-2V
I
E
=0 ; V
CB
=-10V,f=0.1MHz
2000
500
MIN
-100
TYP.
2SB601
MAX
UNIT
V
-1.5
-2.0
-10
-10
-1.0
-3.0
15000
V
V
μA
μA
mA
mA
Switching times
t
on
t
stg
t
f
固电
Fall time
Output capacitance
导½
半
ANG
K
5000-15000
Turn-on time
Storage time
CH
IN
L
3000-7000
MIC
E SE
I
C
=-3A; I
B1
=-I
B2
=-3mA
V
CC
=-50V;R
L
=17Ω
DUC
ON
0.5
1.0
1.0
OR
T
300
pF
μs
μs
μs
h
FE-1
Classifications
M
2000-5000
2
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