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2SC4355T114G

Description
4A, 80V, NPN, Si, POWER TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size110KB,2 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Download Datasheet Parametric View All

2SC4355T114G Overview

4A, 80V, NPN, Si, POWER TRANSISTOR

2SC4355T114G Parametric

Parameter NameAttribute value
package instructionIN-LINE, R-PSIP-T3
Reach Compliance Codeunknow
Maximum collector current (IC)4 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)250
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
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