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BCP52T/R

Description
TRANSISTOR 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size1MB,22 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BCP52T/R Overview

TRANSISTOR 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

BCP52T/R Parametric

Parameter NameAttribute value
MakerNXP
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Maximum operating temperature140 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power dissipation(Abs)1.5 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Nominal transition frequency (fT)115 MHz
BCP52; BCX52; BC52PA
60 V, 1 A PNP medium power transistors
Rev. 9 — 18 October 2011
Product data sheet
1. Product profile
1.1 General description
PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
Table 1.
Product overview
Package
NXP
BCP52
BCX52
BC52PA
[1]
Type number
[1]
NPN complement
JEITA
SC-73
SC-62
-
JEDEC
-
TO-243
-
BCP55
BCX55
BC55PA
SOT223
SOT89
SOT1061
Valid for all available selection groups.
1.2 Features and benefits
High current
Three current gain selections
High power dissipation capability
Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)
Leadless very small SMD plastic package with medium power capability (SOT1061)
AEC-Q101 qualified
1.3 Applications
Linear voltage regulators
High-side switches
Battery-driven devices
Power management
MOSFET drivers
Amplifiers
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
I
CM
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
single pulse; t
p
1 ms
Conditions
open base
Min
-
-
-
Typ
-
-
-
Max
60
1
2
Unit
V
A
A

BCP52T/R Related Products

BCP52T/R BCX52-T BCP52-T
Description TRANSISTOR 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, SOT-89, 3 PIN, BIP General Purpose Small Signal 1A, 60V, PNP, Si, POWER TRANSISTOR
Reach Compliance Code compliant unknown unknown
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 1 A 1 A 1 A
Collector-emitter maximum voltage 60 V 60 V 60 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 25 40 25
JESD-30 code R-PDSO-G4 R-PSSO-F3 R-PDSO-G4
Number of components 1 1 1
Number of terminals 4 3 4
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form GULL WING FLAT GULL WING
Terminal location DUAL SINGLE DUAL
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 115 MHz 50 MHz 115 MHz
Maker NXP - NXP
Shell connection COLLECTOR - COLLECTOR
Maximum operating temperature 140 °C - 150 °C
package instruction - SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PDSO-G4

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