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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3663
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The 2SK3663 is a switching device which can be driven directly
by a 2.5 V power source.
The 2SK3663 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
PACKAGE DRAWING (Unit: mm)
FEATURES
•
2.5 V drive available
•
Low on-state resistance
R
DS(on)1
= 0.57
Ω
MAX. (V
GS
= 4.5 V, I
D
= 0.30 A)
R
DS(on)2
= 0.60
Ω
MAX. (V
GS
= 4.0 V, I
D
= 0.30 A)
R
DS(on)3
= 0.88
Ω
MAX. (V
GS
= 2.5 V, I
D
= 0.15 A)
ORDERING INFORMATION
PART NUMBER
2SK3663
PACKAGE
SC-70 (SSP)
Remark
Marking : G26
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note1
Note2
EQUIVALENT CIRCUIT
V
DSS
V
GSS
I
D (DC)
20
±12
±0.5
±2.0
0.2
150
−55
to +150
V
V
A
A
W
°C
°C
Gate
Body
Diode
Drain
I
D (pulse)
P
T
T
ch
T
stg
Total Power Dissipation
Channel Temperature
Storage Temperature
Gate
Protection
Diode
Source
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2
2.
Mounted on FR-4 board of 2500 mm x 1.1 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No.
D16529EJ1V0DS00 (1st edition)
Date Published January 2003 NS CP(K)
Printed in Japan
2003
RF/Wirelessly
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