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IRF241

Description
18A, 150V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-240AE, TO-204AE, 2 PIN
CategoryDiscrete semiconductor    The transistor   
File Size722KB,2 Pages
ManufacturerRochester Electronics
Websitehttps://www.rocelec.com/
Download Datasheet Parametric View All

IRF241 Overview

18A, 150V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-240AE, TO-204AE, 2 PIN

IRF241 Parametric

Parameter NameAttribute value
MakerRochester Electronics
Parts packaging codeTO-240AE
package instructionTO-204AE, 2 PIN
Contacts2
Reach Compliance Codeunknown
Shell connectionDRAIN
ConfigurationSINGLE
Minimum drain-source breakdown voltage150 V
Maximum drain current (ID)18 A
Maximum drain-source on-resistance0.18 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-204AE
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)72 A
Certification statusCOMMERCIAL
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Transistor component materialsSILICON
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