IRF241R datasheet, PDF - EEWORLD Datasheet

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IRF241R: Description18A, 150V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE; CategoryDiscrete semiconductor The transistor; File Size183KB，5 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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IRF241R Overview

18A, 150V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE

IRF241R Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Renesas Electronics Corporation
Reach Compliance Code	not_compliant
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	580 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	150 V
Maximum drain current (Abs) (ID)	18 A
Maximum drain current (ID)	18 A
Maximum drain-source on-resistance	0.18 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-204AE
JESD-30 code	O-MBFM-P2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	125 W
Maximum power dissipation(Abs)	125 W
Maximum pulsed drain current (IDM)	72 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	140 ns
Maximum opening time (tons)	90 ns

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	IRF241R	IRF243	IRF242	IRF242R	IRF243R	IRF240R
Description	18A, 150V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE	16A, 150V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE	16A, 200V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE	16A, 200V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE	16A, 150V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE	18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	_compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	150 V	150 V	200 V	200 V	150 V	200 V
Maximum drain current (Abs) (ID)	18 A	16 A	16 A	16 A	16 A	18 A
Maximum drain current (ID)	18 A	16 A	16 A	16 A	16 A	18 A
Maximum drain-source on-resistance	0.18 Ω	0.22 Ω	0.22 Ω	0.22 Ω	0.22 Ω	0.18 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-204AE	TO-204AE	TO-204AE	TO-204AE	TO-204AE	TO-204AE
JESD-30 code	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2
JESD-609 code	e0	e0	e0	e0	e0	e0
Number of components	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	METAL	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	125 W	125 W	125 W	125 W	125 W	125 W
Maximum power dissipation(Abs)	125 W	125 W	125 W	125 W	125 W	125 W
Maximum pulsed drain current (IDM)	72 A	64 A	64 A	64 A	64 A	72 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Maximum off time (toff)	140 ns	140 ns	140 ns	140 ns	140 ns	140 ns
Maximum opening time (tons)	90 ns	90 ns	90 ns	90 ns	90 ns	90 ns
Maker	Renesas Electronics Corporation	-	Renesas Electronics Corporation	Renesas Electronics Corporation	Renesas Electronics Corporation	Renesas Electronics Corporation
Avalanche Energy Efficiency Rating (Eas)	580 mJ	-	-	580 mJ	580 mJ	580 mJ

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