RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| package instruction | SMALL OUTLINE, R-PDSO-G3 |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 0.05 A |
| Collector-based maximum capacity | 1 pF |
| Collector-emitter maximum voltage | 6 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 120 |
| highest frequency band | ULTRA HIGH FREQUENCY BAND |
| JESD-30 code | R-PDSO-G3 |
| JESD-609 code | e1 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | NPN |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | TIN SILVER COPPER |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 10 |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 800 MHz |
| VCEsat-Max | 0.3 V |
| Base Number Matches | 1 |
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