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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3712
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3712 is N-channel MOS FET device that features a low
on-state resistance and excellent switching characteristics, and
designed for high voltage applications such as DC/DC converter.
ORDERING INFORMATION
PART NUMBER
2SK3712
2SK3712-Z
PACKAGE
TO-251 (MP-3)
TO-252 (MP-3Z)
FEATURES
•
High voltage: V
DSS
= 250 V
•
Gate voltage rating:
±30
V
•
Low on-state resistance
R
DS(on)
= 0.58
Ω
MAX. (V
GS
= 10 V, I
D
= 4.5 A)
•
Low C
iss
: C
iss
= 450 pF TYP. (V
DS
= 10 V, I
D
= 0 A)
•
Built-in gate protection diode
•
TO-251/TO-252 package
(TO-251)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
Repetitive Avalanche Current
Note3
Repetitive Pulse Avalanche Energy
Note3
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
I
AR
E
AR
250
±30
±9.0
±27
40
1.0
150
–55 to +150
9
8.1
9
8.1
V
V
A
A
W
W
°C
°C
A
mJ
A
mJ
(TO-252)
Notes 1.
PW
≤
10
μ
s, Duty cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 125 V, R
G
= 25
Ω
, V
GS
= 20
→
0 V, L = 100
μ
H
3.
T
ch(peak)
≤
150°C, L = 100
μ
H
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16372EJ3V0DS00 (3rd edition)
Date Published August 2006 NS CP(K)
Printed in Japan
2002
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
PCB Design
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