2SB1117U datasheet, PDF - EEWORLD Datasheet

2SB1117U: DescriptionTRANSISTOR,BJT,PNP,25V V(BR)CEO,3A I(C),TO-221VAR; CategoryDiscrete semiconductor The transistor; File Size159KB，2 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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2SB1117U Overview

TRANSISTOR,BJT,PNP,25V V(BR)CEO,3A I(C),TO-221VAR

Parameter Name	Attribute value
Reach Compliance Code	compli
Maximum collector current (IC)	3 A
Configuration	Single
Minimum DC current gain (hFE)	300
Maximum operating temperature	150 °C
Polarity/channel type	PNP
Maximum power dissipation(Abs)	1 W
surface mount	NO
Nominal transition frequency (fT)	100 MHz
Base Number Matches	1

	2SB1117U
Description	TRANSISTOR,BJT,PNP,25V V(BR)CEO,3A I(C),TO-221VAR
Reach Compliance Code	compli
Maximum collector current (IC)	3 A
Configuration	Single
Minimum DC current gain (hFE)	300
Maximum operating temperature	150 °C
Polarity/channel type	PNP
Maximum power dissipation(Abs)	1 W
surface mount	NO
Nominal transition frequency (fT)	100 MHz
Base Number Matches	1

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