IRFF313R datasheet, PDF - EEWORLD Datasheet

IRFF313R: DescriptionPower Field-Effect Transistor, 1.15A I(D), 350V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF; CategoryDiscrete semiconductor The transistor; File Size199KB，5 Pages; ManufacturerHarris; Websitehttp://www.harris.com/

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IRFF313R Overview

Power Field-Effect Transistor, 1.15A I(D), 350V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Harris
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknown
Avalanche Energy Efficiency Rating (Eas)	150 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	350 V
Maximum drain current (Abs) (ID)	1.15 A
Maximum drain current (ID)	1.15 A
Maximum drain-source on-resistance	5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-205AF
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	15 W
Maximum power dissipation(Abs)	15 W
Maximum pulsed drain current (IDM)	4.5 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	25 ns
Maximum opening time (tons)	30 ns

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