UNISONIC TECHNOLOGIES CO., LTD
2SB1151
LOW COLLECTOR
SATURATION VOLTAGE
LARGE CURRENT
FEATURES
*High Power Dissipation : P
D
=1.5W(T
a
=25℃)
*Complementary to 2SD1691.
1
PNP EPITAXIAL SILICON TRANSISTOR
TO - 126
*Pb-free plating product number: 2SB1151L
PIN CONFIGURATION
PIN NO.
PIN NAME
1
Emitter
2
Collector
3
Base
ORDERING INFORMATION
Order Number
Normal
Lead free
2SB1151-T60-T 2SB1151L-T60-T
Package
TO-126
Packing
Tube
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., LTD
1
QW-R204-022,A
2SB1151
ABSOLUTE MAXIMUM RATING
(Ta=25 )
PNP EPITAXIAL SILICON TRANSISTOR
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
-60
V
Collector-Emitter Voltage
V
CEO
-60
V
Emitter-Base Voltage
V
EBO
-7
V
DC
I
C
-5
A
Collector Current
-8
Pulse(Note 3)
I
CP
Base Current
I
B
-1
A
T
a
=25℃
1.5
Power Dissipation
P
D
W
T
c
=25℃
20
Junction Temperature
T
J
125
Operating Temperature
T
OPR
0 ~ +70
Storage Temperature
T
STG
-40 ~ +150
Note 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.The device is guaranteed to meet performance specification within 0℃~70℃ operating temperature range
and assured by design from -40℃~ 85℃.
3.PW
≤10ms,
Duty Cycle
≤50%
ELECTRICAL CHARACTERISTICS
(Ta=25℃, unless otherwise specified.)
PARAMETER
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
SYMBOL
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE 1
h
FE 2
h
FE 3
t
ON
t
STG
t
F
TEST CONDITIONS
V
CB
=-50V, I
E
=0
V
EB
=-7V, I
C
=0
I
C
=-2A, I
B
=-0.2A
I
C
=-2A, I
B
=-0.2A
V
CE
=-1V, I
C
=-0.1A
V
CE
=-1V, I
C
=-2A
V
CE
=-2V, I
C
=-5A
OUTPUT
MIN
TYP MAX UNIT
-10
µA
-10
µA
-0.14 -0.3
V
-.0.9 -1.2
V
400
60
160
50
0.15
5Ω
Turn On Time
Switching Time
Storage Time
Fall Time
I
B1
20µsec
-I
B1
=I
B2
=0.2A
0
I
B2
INPUT
I
B1
I
B2
V
CC
=-10V
1
2.5
1
µS
0.78
0.18
≤
DUTY CYCLE 1%
Pulse test : PW
≤350
µS, Duty Cycle
≤2%
Pulse
CLASSIFICATION OF hFE2
RANK
RANGE
O
160 ~ 320
Y
200 ~ 400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2
QW-R204-022,A
2SB1151
TYPICAL CHARACTERISTICS
P
D
- Ta
25
Power Dissipation, P
D
(W)
20
15
10
5
0
0
50
100
150
200
250
T
C
=Ta
INFINTE HEAT SINK
PNP EPITAXIAL SILICON TRANSISTOR
d
T
- T
C
160
140
I
C
Derating, d
T
(%)
120
100
80
60
40
20
0
0
25
50
ip
ss
Di
io
at
n
d
it e
m
Li
S/ b
Lim
ite
d
75
100 125 150 175 200
Ambient Temperature, T
a
(
℃
)
Case Temperature, T
C
(
℃
)
Safe Oerating Area
-10
Collector Current, I
C
（A）
-5
-3
-1
-0.5
-0.3
I
C
(Pulse) MAX.
I
C
(DC)MAX.
Reverse Bias Safe Operating Area
-10
Collector Current, I
C
（A）
-8
-6
-4
-2
0
V
CEO (SUS)
2m
10 s*
ms
20
0m *
s
-0.1
-1
* SINGLE NONREPETIVE
PULSED T
a
=25
℃
CURVES MUST BE DERATED
LINERLY WITH INCREASE
IN TEMPERATURE
V
CEO( MAX)
d
ite
m
Li
n ed
io it
a t im
ip L
iss S/b
D
-3
-5
-10
-30 -50
-100
-20
-40
-60
-80
-100
Collector-Emitter Voltage, V
CE
（V）
Collector-Emitter Voltage, V
CE
（V）
I
C
- V
CE
-10
Collector Current, I
C
（A）
-8
h
FE
- I
C
1K
500
300
100
50
30
10
5
3
1
-0.01 -0.03
-4
-2
I
B
=
-20
0m
A
-6
I
B
=-40mA
I
B
=-30mA
I
B
=-20mA
I
B
=-10mA
I
B
=0mA
Dc Current Gain, h
FE
A
A
0m
A
15 00m 80m
=- - 1
-
B
I
I
B
=
I
B
=
I
B
=-60mA
V
CE
=-2V
V
CE
=-1V
0
-0.4
-0.8
-1.2
-1.6
-2.0
-0.1 -0.3
-1
-3
-10
Collector-Emitter Voltage, V
CE
（V）
Collector Current, I
C
(A)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3
QW-R204-022,A
2SB1151
TYPICAL CHARACTERISTICS
V
BE(Sat)
, V
CE(Sat)
- I
C
-10
-5
-3
-1
-0.5
-0.2
-0.1
-0.05
-0.03
-0.01
V
BE(sat)
I
C
/I
B
=10
Staturation Voltage, V
BE(Sat),
V
CE(Sat)
(V)
PNP EPITAXIAL SILICON TRANSISTOR
V
CE(sat)
-0.03 -0.1
-0.3
-1
-3
-10
Collector Current, I
C
(A)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4
QW-R204-022,A
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