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TF202E5

Description
1mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, SSFP, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size33KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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TF202E5 Overview

1mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, SSFP, 3 PIN

TF202E5 Parametric

Parameter NameAttribute value
MakerSANYO
package instructionSMALL OUTLINE, R-PDSO-F3
Contacts3
Reach Compliance Codeunknown
ConfigurationSINGLE
Maximum drain current (ID)0.001 A
FET technologyJUNCTION
JESD-30 codeR-PDSO-F3
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.1 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Ordering number : ENN7554
TF202
N-channel Junction FET
TF202
Electret Condenser Microphone Applications
Features
Package Dimensions
unit : mm
2207A
[TF202]
Top View
1.4
0.3
Especially suited for use in electret condenser
microphone.
Ultrasmall package permitting TF202
applied sets to be made small and slim.
Excellent voltage characteristics.
Excellent transient characteristics.
Adoption of FBET process.
Side View
0.1
1.4
0.25
3
0.3
1
0.45
2
0.2
Bottom View
3
0.6
0.8
0.07
0.07
Side View
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VGDO
IG
ID
PD
Tj
Tstg
Conditions
1 : Drain
2 : Source
3 : Gate
SANYO : SSFP
Unit
--20
10
1
100
150
--55 to +150
V
mA
mA
mW
°C
°C
2
1
Ratings
Electrical Characteristics
at Ta=25°C
Parameter
Gate-to-Drain Breakdown Voltage
Cutoff Voltage
Zero-Gate Voltage Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Symbol
V(BR)GDO
VGS(off)
IDSS
yfs
Ciss
Crss
IG=--100µA
VDS=5V, ID=1µA
VDS=5V, VGS=0
VDS=5V, VGS=0, f=1kHz
VDS=5V, VGS=0, f=1MHz
VDS=5V, VGS=0, f=1MHz
Conditions
Ratings
min
--20
-
-0.2
140*
0.5
1.2
3.5
0.65
--0.6
--1.2
500*
typ
max
Unit
V
V
µA
mS
pF
pF
Continued on next page.
* : The TF202 is classified by IDSS as follows : (unit :
µA)
Rank
IDSS
E4
140 to 240
E5
210 to 350
E6
320 to 500
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82903 TS IM TA-100524 No.7554-1/4

TF202E5 Related Products

TF202E5 TF202-E4 TF202E4 TF202-E5 TF202E6 TF202-E6
Description 1mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, SSFP, 3 PIN Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, SSFP, 3 PIN 1mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, SSFP, 3 PIN Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, SSFP, 3 PIN 1mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, SSFP, 3 PIN Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, SSFP, 3 PIN
package instruction SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3
Contacts 3 3 3 3 3 3
Reach Compliance Code unknown unknown unknown unknown unknown unknown
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum drain current (ID) 0.001 A 0.001 A 0.001 A 0.001 A 0.001 A 0.001 A
FET technology JUNCTION JUNCTION JUNCTION JUNCTION JUNCTION JUNCTION
JESD-30 code R-PDSO-F3 R-PDSO-F3 R-PDSO-F3 R-PDSO-F3 R-PDSO-F3 R-PDSO-F3
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Operating mode DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 0.1 W 0.1 W 0.1 W 0.1 W 0.1 W 0.1 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES
Terminal form FLAT FLAT FLAT FLAT FLAT FLAT
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Maker SANYO - - SANYO SANYO SANYO
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