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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ557
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The 2SJ557 is a switching device which can be driven directly
by a 4 V power source.
The 2SJ557 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
PACKAGE DRAWING (Unit : mm)
0.4
+0.1
–0.05
0.16
+0.1
–0.06
0.65
–0.15
+0.1
2.8 ±0.2
3
1.5
0 to 0.1
1
2
FEATURES
•
Can be driven by a 4 V power source
•
Low on-state resistance
R
DS(on)1
= 155 mΩ MAX. (V
GS
= –10 V, I
D
= –1.0 A)
R
DS(on)2
= 255 mΩ MAX. (V
GS
= –4.5 V, I
D
= –1.0 A)
R
DS(on)3
= 290 mΩ MAX. (V
GS
= –4.0 V, I
D
= –1.0 A)
0.95
0.95
0.65
0.9 to 1.1
1.9
2.9 ±0.2
1 : Gate
2 : Source
3 : Drain
ORDERING INFORMATION
PART NUMBER
PACKAGE
SC-96 (Mini Mold Thin Type)
5
2SJ557
EQUIVALENT CIRCUIT
Drain
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
Note2
–30
–20 / +5
±2.5
±10
0.2
1.25
150
–55 to +150
V
V
A
A
W
W
°C
°C
Gate
Gate
Protection
Diode
Marking: XB
Body
Diode
Source
Total Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1 %
2.
Mounted on FR-4 Board, t
≤
5 sec.
Remark
P
T2
T
ch
T
stg
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D13292EJ2V0DS00 (2nd edition)
Date Published May 2001 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
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1998, 1999
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