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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ557A
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The 2SJ557A is a switching device which can be driven directly
by a 4 V power source.
The 2SJ557A features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
PACKAGE DRAWING (Unit : mm)
0.4
+0.1
–0.05
0.65
–0.15
+0.1
0.16
+0.1
–0.06
2.8±0.2
3
1.5
0 to 0.1
1
2
FEATURES
•
4 V drive available
•
Low on-state resistance
R
DS(on)1
= 100 mΩ MAX. (V
GS
=
−10
V, I
D
=
−1.0
A)
R
DS(on)2
= 134 mΩ MAX. (V
GS
=
−4.5
V, I
D
=
−1.0
A)
R
DS(on)3
= 166 mΩ MAX. (V
GS
=
−4.0
V, I
D
=
−1.0
A)
•
Built-in gate protection diode
0.95
0.95
0.65
0.9 to 1.1
1.9
2.9±0.2
1: Gate
2: Source
3: Drain
ORDERING INFORMATION
PART NUMBER
2SJ557A
PACKAGE
3-pin Mini Mold (Thin Type) (SC-96)
EQUIVALENT CIRCUIT
Drain
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Note1
Drain Current (pulse)
Total Power Dissipation
Note2
Total Power Dissipation
Channel Temperature
Storage Temperature
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
−30
m20
m2.5
m10
0.2
1.25
150
−55
to
+150
V
V
A
A
W
W
°C
°C
Gate
Gate
Protection
Diode
Body
Diode
Source
<R> Marking: XS
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1 %
2.
Mounted on FR-4 board of 2500 mm
2
x 1.6 mm, copper foil 100%, t
≤
5 sec.
<R>
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
V
ESD
±180
V TYP. at C = 200 pF, R = 0
Ω,
Single Pulse.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19059EJ2V0DS00 (2nd edition)
Date Published December 2007 NS
Printed in Japan
2007
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
Microcontroller MCU
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