UNISONIC TECHNOLOGIES CO., LTD
2SD882
MEDIUM POWER LOW
VOLTAGE TRANSISTOR
FEATURES
* High current output up to 3A
* Low saturation voltage
* Complement to 2SB772
NPN SILICON TRANSISTOR
APPLICATIONS
* Audio power amplifier
* DC-DC convertor
* Voltage regulator
ORDERING INFORMATION
Normal
2SD882-x-T60-K
2SD882-x-T6C-K
2SD882-x-TM3-T
2SD882-x-TN3-R
2SD882-x-TN3-T
2SD882-x-T9N-B
2SD882-x-T9N-K
Ordering Number
Lead Free
2SD882L-x-T60-K
2SD882L-x-T6C-K
2SD882L-x-TM3-T
2SD882L-x-TN3-R
2SD882L-x-TN3-T
2SD882L-x-T9N-B
2SD882L-x-T9N-K
Halogen Free
2SD882G-x-T60-K
2SD882G-x-T6C-K
2SD882G-x-TM3-T
2SD882G-x-TN3-R
2SD882G-x-TN3-T
2SD882G-x-T9N-B
2SD882G-x-T9N-K
Package
TO-126
TO-126C
TO-251
TO-252
TO-252
TO-92NL
TO-92NL
Pin Assignment
1
2
3
E
C
B
E
C
B
B
C
E
B
C
E
B
C
E
E
C
B
E
C
B
Packing
Bulk
Bulk
Tube
Tape Reel
Tube
Tape Box
Bulk
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
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QW-R209-003.E
2SD882
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation
(
Ta=25℃
)
TO-92NL
TO-251/TO-252/
TO-126/TO-126C
DC
Pulse
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(Ta=25℃, unless otherwise specified )
RATINGS
40
30
5
3
7
0.6
0.8
1
UNIT
V
V
V
A
A
A
W
W
Junction Temperature
T
J
+150
℃
Storage Temperature
T
STG
-55 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25℃, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
DC Current Gain (Note 1)
h
FE2
Collector-Emitter Saturation Voltage
V
CE(SAT)
Base-Emitter Saturation Voltage
V
BE(SAT)
Current Gain Bandwidth Product
f
T
Output Capacitance
Cob
Note 1: Pulse test: PW<300μs, Duty Cycle<2%
TEST CONDITIONS
I
C
=100μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100μA, I
C
=0
V
CB
=30V, I
E
=0
V
EB
=3V, I
C
=0
V
CE
=2V, I
C
=20mA
V
CE
=2V, I
C
=1A
I
C
=2A, I
B
=0.2A
I
C
=2A, I
B
=0.2A
V
CE
=5V, I
C
=0.1A
V
CB
=10V, I
E
=0, f=1MHz
MIN
40
30
5
TYP
MAX
UNIT
V
V
V
nA
nA
1000
1000
30
100
200
150
0.3
1.0
80
45
400
0.5
2.0
V
V
MHz
pF
CLASSIFICATION OF h
FE2
RANK
RANGE
Q
100-200
P
160-320
E
200-400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R209-003.E
2SD882
TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
Collector Current, Ic (A)
Derating, I
C
(%)
S/
bl
im
ite
d
ip
ss
Di
io
at
n
i te
lim
d
Current Gain-Bandwidth Product
Current Gain-
Bandwidth Product, F
T
(MHz)
10
3
V
CE
=5V
I
B
=8mA
10
1
Safe Operating Area
10
1
Collector Current, I
C
(A)
1
10
mS mS
S
1m
0.
10
2
10
0
I
C
(max), DC
10
-1
I
C
(max), Pulse
10
-2
10
10
-2
0
10
-1
10
0
10
1
10
0
10
1
Collector-Emitter Voltage
10
2
Collector Current, Ic (A)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Saturation Voltage (mV)
DC Current Gain, h
FE
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2SD882
TYPICAL CHARACTERISTICS(Cont.)
Collector Output Capacitance
Output Capacitance (pF)
10
3
I
E
=0
f=1MHz
NPN SILICON TRANSISTOR
10
2
10
1
10
0
10
0
10
-1
10
-2
10
-3
Collector-Base Voltage (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R209-003.E
PCB Design
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