Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2333
DESCRIPTION
・With
TO-220C package
・High
speed switching
・Low
collector saturation voltage
APPLICATIONS
・Switching
regulator
・DC-DC
converter
・Ultrasonic
appliance
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
T
T
j
T
stg
固电
导½
半
PARAMETER
INC
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
ANG
H
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
CT
NDU
O
VALUE
500
400
7
2
4
1
UNIT
V
V
V
A
A
A
W
℃
℃
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
15
150
-55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
I
CER
I
CEX1
I
CEX2
I
CBO
I
EBO
h
FE-1
h
FE-2
t
on
t
stg
t
f
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=0.5A;I
B
=0.1A;L=1mA
I
C
=0.5A; I
B
=0.1A
I
C
=0.5A; I
B
=0.1A
V
CE
=400V;R
BE
=51Ω;
T
a
=125℃
V
CE
=400V;V
BE(OFF)
=-5.0V
V
CE
=400V;V
BE(OFF)
=-5.0V
T
a
=125℃
V
CB
=400V ;I
E
=0
V
EB
=5V; I
C
=0
I
C
=0.1A ; V
CE
=5V
MIN
400
2SC2333
TYP.
MAX
UNIT
V
1.0
1.2
1.0
10
1.0
10
10
V
V
mA
μA
mA
μA
μA
固电
Fall time
DC current gain
导½
半
ANG
CH
IN
Turn on time
Storage time
MIC
E SE
I
C
=0.5A ; V
CE
=5V
OR
CT
NDU
O
20
80
10
1.0
2.5
1.0
μs
μs
μs
I
C
=0.5A;I
B1
=-I
B2
=0.1A
R
L
=300Ω;V
CC
=150V
h
FE-1
classifications
M
20-40
L
30-60
K
40-80
2
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